Simple expression for vacancy concentrations at half ion range following MeV ion implantation of silicon

Coleman, P. G.; Burrows, C. P.; Knights, Andrew P.

doi:10.1063/1.1448856

Cited by 29 publications

(16 citation statements)

References 14 publications

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“…2 were fitted using the code VEPFIT [25], requiring consistency between the S parameter for the damaged layer and the positron diffusion length in the layer. The average monovacancy concentration over the first 150 nm is estimated to be approximately 2 10 18 cm ÿ3 , corresponding (again approximately) to a total He ion dose of 10 12 cm ÿ2 [16]. The fitted S value characteristic of the monovacancy was found to be 1.027.…”

mentioning

confidence: 89%

“…There has been considerable success in depth profiling openvolume point defects for a wide variety of ion masses and energies [16] and in identifying vacancy-impurity complexes [17], the interaction of vacancies with hydrogen and helium [18], and agglomeration into voids and cavities [19]. However, almost all of these studies have been performed on samples which have been held at room temperature after ion implantation and before VEPAS interrogation, so that the initial monovacancy damage (modeled, for example, by the widely used simulation code TRIM [20]) recombines and agglomerates so that only a few percent survives, predominantly as divacancies [21].…”

mentioning

confidence: 99%

“…[16] At the start of a typical measurement run, about 80% of implanted positrons are trapped in monovacancies, and at the end about 25% are trapped in divacancies; as a consequence, the measured S value in the defected region decreases with time.…”

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confidence: 99%

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Monovacancy and Interstitial Migration in Ion-Implanted Silicon

Coleman

Burrows

2007

Phys. Rev. Lett.

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The migration of monovacancies (V0) and self-interstitials (I) has been observed in ion-implanted low-doped float-zone silicon by variable-energy positron annihilation spectroscopy. V0 and I were created by the in situ implantation of approximately 20 keV helium ions below 50 K. Monitoring the time evolution of the vacancy response during isothermal heating enabled the measurement of activation energies for I and V(0) [corrected] migration of 0.078(7) and 0.46(28) eV, respectively. In highly As-doped Si, partial V annihilation occurs via free I migration, with a second stage of annealing, probably associated with V-As complexes, above room temperature.

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Monovacancy and Interstitial Migration in Ion-Implanted Silicon

Coleman

Burrows

2007

Phys. Rev. Lett.

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“…The effect of the loss of vacancies outweighs that of the increase of defect size, and so S decreases in these two regions after 8.5 min. Because of the high implantation energy, the vacancy distribution can be regarded as uniform in the V-rich region [18], and a V 2 concentration of 8:5 10 18 cm ÿ3 in the region 1:1 m can be estimated with VEPFIT from PAS in the as-implanted sample. It is clear that the F concentration is higher than the vacancy concentration in region II.…”

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Fluorine in Silicon: Diffusion, Trapping, and Precipitation

Burrows

Coleman

2003

Phys. Rev. Lett.

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The effect of vacancies on the behavior of F in crystalline Si has been elucidated experimentally for the first time. With positron annihilation spectroscopy and secondary ion mass spectroscopy, we find that F retards recombination between vacancies (V) and interstitials (I) because V and I trap F to form complexes. F diffuses in the V-rich region via a vacancy mechanism with an activation energy of 2.12+/-0.08 eV. After a long annealing time at 700 degrees C, F precipitates have been observed by cross-section transmission electron microscopy which are developed from the V-type defects around the implantation range and the I-type defects at the end of range.

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“…This so-called R p /2 effect, already observed in other materials [39,40], arises from an incomplete cancellation, during cascade rearrangement, of interstitial and vacancy shifted-apart distributions. It has to be accounted for when ion beams are used to manufacture microelectronic chips, such as for instance in the so-called Smart Cut ® process (or "ion cut") [41], based on the build up of a sub-surface damage layer where cleavage can take place in order to remove a thin layer from its parent wafer.…”

Section: Surface Modification Of Materials By Ion Implantationmentioning

confidence: 69%

Positron depth profiling in solid surface layers

Grynszpan¹,

Anwand²,

Bräuer³

et al. 2007

Ann. Chim. Sci. Mat.

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-We briefly review the principles of the Doppler Broadening of the positron annihilation radiation line, the most common technique used in defect depth profiling of solids relevant to dcbeams. We focus on some specific examples of Slow Positron Implantation Spectroscopy (SPIS) investigations related to technological issues such as, for instance, i) phase transitions in metal coatings possibly induced by internal stresses, ii) substrate pre-treatment or annealing dependence of defect profiles at metal/polymer interfaces or in the deposited layers, and. iii) near-surface structural modification by ion implantation in ceramics and multilayers. In each case we elaborate on the possibility of using SPIS results and possible depth profile features as criteria for on-or off-line quality control in industrial processes. We finally conclude with an overall picture of the operating characteristics of positron annihilation techniques.Résumé -Profils d'implantation des positons dans des couches de surface des solides. Nous passons brièvement en revue les principes de la méthode de l'élargissement Doppler de la raie d'annihilation des positons, technique la plus fréquemment utilisée en analyse de surface des solides par faisceau à courant continu. Nous considérons quelques d'applications technologiques de la caractérisation par spectroscopie d'implantation des positrons lents (SPIS), telles que, par exemple, i) les transitions de phases éventuellement induites par contraintes internes dans les dépôts métalliques, ii) l'influence de prétraitements du substrat ou de recuits sur le profil des défauts aux interfaces métal/polymère ou dans des couches déposées, et iii) la modification structurale par implantation ionique en proche surface de céramiques et de multicouches. Dans tous les cas nous envisageons l'éventualité d'utiliser la technique SPIS et les particularités des profils de défauts comme critères dans des contrôles de qualité en ligne ou en post-production industrielle. Enfin, nous concluons par un panorama des caractéristiques de mise en oeuvre des techniques de spectroscopie d'annihilation des positrons.

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Simple expression for vacancy concentrations at half ion range following MeV ion implantation of silicon

Cited by 29 publications

References 14 publications

Monovacancy and Interstitial Migration in Ion-Implanted Silicon

Monovacancy and Interstitial Migration in Ion-Implanted Silicon

Fluorine in Silicon: Diffusion, Trapping, and Precipitation

Positron depth profiling in solid surface layers

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