Simple Fabrication and Characterization of an Aluminum Nanoparticle Monolayer with Well-Defined Plasmonic Resonances in the Far Ultraviolet

Aguilar-Del-Valle, María Del Pilar; Cruz‐Manjarrez, H.; Rodríguez-Gómez, Arturo

doi:10.3390/met8010067

Cited by 8 publications

(3 citation statements)

References 34 publications

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“…We employed a Cu sputtering target of 99.9995% purity and sputtering equipment of our own manufacture. The equipment specs and the sputtering methodology are conscientiously explained elsewhere Table indicates the deposition parameters for the copper thin films grown on glass and silica substrates.…”

Section: Methodsmentioning

confidence: 99%

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Design, Growth, and Characterization of Crystalline Copper Oxide p-Type Transparent Semiconductive Thin Films with Figures of Merit Suitable for Their Incorporation into Translucent Devices

Valle

Garrido

Alonso-Huitrón

et al. 2022

Crystal Growth & Design

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The development of high-performance p-type transparent conductive oxides (TCOs) is a scientific challenge. Cupric oxide (CuO) and cuprous oxide (Cu 2 O) are attractive candidates for manufacturing p-type TCOs due to their optoelectronic properties. However, tailoring the copper oxide optical absorption and sheet resistance using scalable and simple synthesis methods is not easy. This work presents a straightforward and highly reproducible methodology based on DC sputtering plus thermal treatments to manufacture copper oxide p-type TCOs with optimal figures of merit. We demonstrate that a low-temperature longtime annealing is capable of changing the conductivity and average transmittance of a determined copper oxide TCO. Our proposed long thermal treatment produces a decrease in the TCO average transmittance from 82 to 67%, but, in return, it generates an increment in the conductivity of 3 orders of magnitude from 2.5 × 10 −5 S/cm up to 0.048 S/cm. We estimate that these p-type TCOs could be used to build diverse translucent experimental devices where a p−n heterojunction is required.

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Section: Methodsmentioning

confidence: 99%

“…The equipment specs and the sputtering methodology are conscientiously explained elsewhere. 51 Table 1 indicates the deposition parameters for the copper thin films grown on glass and silica substrates.…”

Section: Introductionmentioning

confidence: 99%

Design, Growth, and Characterization of Crystalline Copper Oxide p-Type Transparent Semiconductive Thin Films with Figures of Merit Suitable for Their Incorporation into Translucent Devices

Valle

Garrido

Alonso-Huitrón

et al. 2022

Crystal Growth & Design

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“…Glass and fused silica substrates were used for optical and electrical characterization. The NaCl substrates allowed us to carry out an exhaustive study of the nanostructural characteristics by scanning and transmission electron microscopy [28,29].…”

Section: Substrate Preparationmentioning

confidence: 99%

Al-Doped ZnO Thin Films with 80% Average Transmittance and 32 Ohms per Square Sheet Resistance: A Genuine Alternative to Commercial High-Performance Indium Tin Oxide

Cisneros-Contreras

López-Ganem

Sánchez‐Dena

et al. 2023

Physics

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In this study, a low-sophistication low-cost spray pyrolysis system built by undergraduate students is used to grow aluminum-doped zinc oxide thin films (ZnO:Al). The pyrolysis system was able to grow polycrystalline ZnO:Al with a hexagonal wurtzite structure preferentially oriented on the c-axis, corresponding to a hexagonal wurtzite structure, and exceptional reproducibility. The ZnO:Al films were studied as transparent conductive oxides (TCOs). Our best ZnO:Al TCO are found to exhibit an 80% average transmittance in the visible range of the electromagnetic spectrum, a sheet resistance of 32 Ω/□, and an optical bandgap of 3.38 eV. After an extensive optical and nanostructural characterization, we determined that the TCOs used are only 4% less efficient than the best ZnO:Al TCOs reported in the literature. This latter, without neglecting that literature-ZnO:Al TCOs, have been grown by sophisticated deposition techniques such as magnetron sputtering. Consequently, we estimate that our ZnO:Al TCOs can be considered an authentic alternative to high-performance aluminum-doped zinc oxide or indium tin oxide TCOs grown through more sophisticated equipment.

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Semi-insulating GaAs surface modifications and their influence in the response of THz devices

et al. 2021

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Simple Fabrication and Characterization of an Aluminum Nanoparticle Monolayer with Well-Defined Plasmonic Resonances in the Far Ultraviolet

Cited by 8 publications

References 34 publications

Design, Growth, and Characterization of Crystalline Copper Oxide p-Type Transparent Semiconductive Thin Films with Figures of Merit Suitable for Their Incorporation into Translucent Devices

Design, Growth, and Characterization of Crystalline Copper Oxide p-Type Transparent Semiconductive Thin Films with Figures of Merit Suitable for Their Incorporation into Translucent Devices

Al-Doped ZnO Thin Films with 80% Average Transmittance and 32 Ohms per Square Sheet Resistance: A Genuine Alternative to Commercial High-Performance Indium Tin Oxide

Semi-insulating GaAs surface modifications and their influence in the response of THz devices

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