Simple Hydrogen Plasma Doping Process of Amorphous Indium Gallium Zinc Oxide-Based Phototransistors for Visible Light Detection

Kang, Byung Ha; Kim, Won Gi; Chung, Jusung; Lee, Jin Hyeok; Kim, Hyun Jae

doi:10.1021/acsami.7b17897

Cited by 58 publications

(74 citation statements)

References 52 publications

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“…Compared with previous reported memtransistors, the retention time and switching ratio is comparable. [ 32,33 ]…”

Section: Resultsmentioning

confidence: 99%

“…Compared with previous reported memtransistors, the retention time and switching ratio is comparable. [32,33] In a biological retina, an incident visible light signal can be transformed into neural electrical signals and sent to the brain for image construction and recognition. [5][6][7]9,10] As mentioned above, the ion gel-coupled oxides are photosensitive, which is an essential function for artificial vision.…”

Section: (4 Of 9)mentioning

confidence: 99%

“…Meanwhile, In-Ga-Zn-O is a wide bandgap semiconducting material, which has an excellent photoresponse when illuminated with photons that have energy larger than the optical bandgap. [32,33] Accordingly, charge-trapping-mediated In-Ga-Zn-O transistors show a combined effect of photodetection, memristive behaviors and gate regulation, that is, a memtransistor, [34,35] making them suitable for applications in artificial vision systems. The devices not only act as photosensory elements to transform light stimuli into an electrical signal, but they also provide visual memory for processing, encoding, and storing signals.…”

Section: Introductionmentioning

confidence: 99%

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Optoelectronic In‐Ga‐Zn‐O Memtransistors for Artificial Vision System

Qiu

Huang

Kong

et al. 2020

Adv Funct Materials

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An artificial vision system that can simulate the visual functions of human eyes is required for biological robots. Here, In-Ga-Zn-O memtransistors using a naturally oxidized Al 2 O 3 and an ion gel as a common gate stacking dielectric is proposed. Positive charge trapping in the Al 2 O 3 layer can be induced by modulating the gate voltage, which causes the back sweep subthreshold swing (SS) of the device to break the physical limit (≥60 mV per decade at room temperature), and the minimum SS is as low as 26.4 mV per decade. In addition, photogenerated charges in the device are captured at the In-Ga-Zn-O channel/ion gel interface due to the superposition of the additional electric field generated by positive charges trapped in the Al 2 O 3 layer and the external gate electric field. Thus, persistent photoconductivity is observed in the In-Ga-Zn-O memtransistors. Finally, by employing the optoelectronic memristive functions of In-Ga-Zn-O memtransistors, an artificial vision system based on artificial retinal array (ARA) and artificial neural network is proposed. An obvious improvement in the recognition rate and efficiency with the use of ARA for the image preprocessing is achieved. This study provides a new strategy for the realization of artificial vision systems.

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“…Compared with previous reported memtransistors, the retention time and switching ratio is comparable. [ 32,33 ]…”

Section: Resultsmentioning

confidence: 99%

Section: (4 Of 9)mentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Optoelectronic In‐Ga‐Zn‐O Memtransistors for Artificial Vision System

Qiu

Huang

Kong

et al. 2020

Adv Funct Materials

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“…Appropriate level of subgap states can increase the light absorption and enhance photosensitivity. Actually, there have been several studies applying the theory that a higher density of subgap states leads to improved optical absorption in oxide semiconductors . A number of subgap states provide more trap‐assisted photoexcitation routes for carriers, even receiving same photoenergy.…”

Section: Multifunctional and Emerging Applications With Low‐temperatumentioning

confidence: 99%

A Review of Low‐Temperature Solution‐Processed Metal Oxide Thin‐Film Transistors for Flexible Electronics

Park

Kang

Kim

2019

Adv Funct Materials

Self Cite

316

211

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Solution processing, including printing technology, is a promising technique for oxide thin-film transistor (TFTs) fabrication because it tends to be a costeffective process with high composition controllability and high throughput. However, solution-processed oxide TFTs are limited by low-performance and stability issues, which require high-temperature annealing. This high thermal budget in the fabrication process inhibits oxide TFTs from being applied to flexible electronics. There have been numerous attempts to promote the desired electrical characteristics of solution-processed oxide TFTs at lower fabrication temperatures. Recent techniques for achieving low-temperature (<350 °C) solution-processed and printed oxide TFTs, in terms of the materials, processes, and structural engineering methods currently in use are reviewed. Moreover, the core techniques for both n-type and p-type oxidebased channel layers, gate dielectric layers, and electrode layers in oxide TFTs are addressed. Finally, various multifunctional and emerging applications based on low-temperature solution-processed oxide TFTs are introduced and future outlooks for this highly promising research are suggested.

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“…7 Quantum dots, heterojunctions and elemental impurities have also been introduced into the a-IGZO TFTs to extend their photosensing performance to visible light. [8][9][10][11] Nevertheless, such methods impose processing complexity or high thermal budget. Second, there are trade-offs between exibility, electrical properties and photosensing performance for a-IGZO TFTs.…”

Section: Introductionmentioning

confidence: 99%