Simple kinetic sensor to structural transitions

Chandni, U.; Ghosh, Arindam

doi:10.1103/physrevb.81.134105

Cited by 9 publications

(9 citation statements)

References 29 publications

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“…electrical bias and temperature, can shed light on electron transport, carrier recombination mechanisms and, what is most important in this case, magnetic and metal-insulator phase transitions. [40][41][42][43][44][45][46] We have previously used successfully the low-frequency noise measurements as the "noise spectroscopy" for monitoring phase transitions in the 2D charge-density-wave materials; [47][48][49] examining the specifics of magnon transport in magnetic electrical insulators; [50] and clarifying the nature of electron transport in quasi-1D vdW materials. [51,52] Our measurements of noise in thin films of FePS 3 reveal a number of interesting features, which contribute to a better understanding of the properties of this AF vdW semiconductor.…”

Section: Introductionmentioning

confidence: 99%

Low‐Frequency Electronic Noise in Quasi‐2D van der Waals Antiferromagnetic Semiconductor FePS₃—Signatures of Phase Transitions

Ghosh

Kargar

Mohammadzadeh

et al. 2021

Adv Elect Materials

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These layered quasi-2D van der Waals (vdW) compounds have interesting electronic, optical, and magnetic properties that can offer new device functionalities. [7][8][9][10][11][12][13][14][15][16][17][18][19] It has been demonstrated that some MPX 3 thin films are one of the rare few-layer vdW materials, which can have stable intrinsic antiferomagnetism (AF) even at mono-and few layer thicknesses. [20][21][22] The existence of weak vdW bonds between the MPX 3 layers makes them potential candidates for the 2D spintronic devices. The metal element of the MPX 3 materials modifies the bandgap from a medium bandgap of ≈1.3 eV to a wide bandgap of ≈3.5 eV. [1][2][3] The diverse properties of these materials tunable by proper selection and combination of the M and X elements make the MPX 3 materials an interesting platform for fundamental science and practical applications. [1][2][3][4][23][24][25][26][27][28][29][30] Among MPX 3 materials, FePS 3 is particularly promising. Its Ising-type ordering allows it to maintain the bulk-like magnetic behavior down to a single monolayer, which explains its moniker -"magnetic graphene." [31] The cleavage energy of FePSe 3 is slightly higher than that of graphite, while that for all other combinations of the M and X elements is lower than that of graphite. [32] The Néel temperature, T N , for FePS 3 is reported to be around 118 K. [1,2,20] It shows strong magnetic anisotropy. [15,33,34] In the crystal, each Fe atom is ferromagnetically coupled with two of its neighbors but the layer is antiferromagnetically coupled with nearest layers making it a zigzag-AF (z-AF) material. [1] The semiconducting nature of FePS 3 , with the energy bandgap of 1.5 eV, and a possibility of the strain engineering of electron and phonon band-structure create additional means for the control of both electron and spin transport. [9,17,35] The quantized spin waves, i.e., magnons in FePS 3 , have frequencies in the terahertz (THz) frequency range, [36,37] which makes this material interesting for THz magnonic devices. However, the electron and spin transport properties of FePS 3 have not been studied in sufficient details yet to assess the potential of such materials for THz applications.Here, we report the results of investigation of low-frequency current fluctuations, i.e., electronic noise, in thin films of FePS 3. The current-voltage (I-V) and noise characteristics

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Section: Introductionmentioning

confidence: 99%

Low‐Frequency Electronic Noise in Quasi‐2D van der Waals Antiferromagnetic Semiconductor FePS₃—Signatures of Phase Transitions

Ghosh

Kargar

Mohammadzadeh

et al. 2021

Adv Elect Materials

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“…Preliminary characterizations have also been performed in mesoscopic perovskite photodiodes 22 . Moreover, by studying the frequency and temperature dependencies of the 1/f spectral noise density, changes in the structural properties of nickel-titanium binary alloys 23 and of iron-based superconductors 24 25 have been revealed. In the case of perovskite solar cell devices, where a phase transition from a tetragonal to an orthorhombic structure has been observed near 160 K 26 , noise measurements can be a very useful experimental technique, considering that no clear signature of such a transition is evident in the cell DC properties.…”

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confidence: 99%

Unravelling the low-temperature metastable state in perovskite solar cells by noise spectroscopy

Barone

Lang

Mauro

et al. 2016

Sci Rep

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The hybrid perovskite methylammonium lead iodide CH3NH3PbI3 recently revealed its potential for the manufacturing of low-cost and efficient photovoltaic cells. However, many questions remain unanswered regarding the physics of the charge carrier conduction. In this respect, it is known that two structural phase transitions, occurring at temperatures near 160 and 310 K, could profoundly change the electronic properties of the photovoltaic material, but, up to now, a clear experimental evidence has not been reported. In order to shed light on this topic, the low-temperature phase transition of perovskite solar cells has been thoroughly investigated by using electric noise spectroscopy. Here it is shown that the dynamics of fluctuations detect the existence of a metastable state in a crossover region between the room-temperature tetragonal and the low-temperature orthorhombic phases of the perovskite compound. Besides the presence of a noise peak at this transition, a saturation of the fluctuation amplitudes is observed induced by the external DC current or, equivalently, by light exposure. This noise saturation effect is independent on temperature, and may represent an important aspect to consider for a detailed explanation of the mechanisms of operation in perovskite solar cells.

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“…We now focus on the higher order statistics of resistivity fluctuations, and extract the non-Gaussian component from the measured fluctuations, which is known to be extremely sensitive to the thermodynamic details of the transition process 20,33,35 . Our objective here is to evaluate the 'second spectrum' S (2) f1 (f 2 ), defined as…”

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confidence: 99%

Conductivity noise study of the insulator-metal transition and phase coexistence in epitaxial samarium nickelate thin films

Sahoo

Ramanathan

et al. 2014

Phys. Rev. B

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Interaction between the lattice and the orbital degrees of freedom not only makes rare-earth nickelates unusually "bad metal", but also introduces a temperature driven insulator-metal phase transition. Here we investigate this insulator-metal phase transition in thin films of SmNiO3 using the slow time dependent fluctuations (noise) in resistivity. The normalized magnitude of noise is found to be extremely large, being nearly eight orders of magnitude higher than thin films of common disordered metallic systems, and indicates electrical conduction via classical percolation in a spatially inhomogeneous medium. The higher order statistics of the fluctuations indicate a strong non-Gaussian component of noise close to the transition, attributing the inhomogeneity to co-existence of the metallic and insulating phases. Our experiment offers a new insight on the impact of lattice-orbital coupling on the microscopic mechanism of electron transport in the rareearth nickelates.The interest in Perovskite nickelates (RNiO 3 , R = rare earth elements) originates from a rich phase space that exhibits many interesting phenomena including sharp insulator-metal transition, charge or orbital ordering, magnetic ordering etc.1-5 . The radius of the rare earth element controls the bond lengths as well as the tilt of the (N iO 6 ) 3− octahedra, and hence the orbital overlap which allows a large variation in the electron interaction within the RNiO 3 family 5,6 . The correlation effects are however complicated by the structural uniqueness of these compounds. For small radius, e.g. R = Sm, Eu, Gd,..., Lu, an antiferromagentic insulator (AFI) ground state is stabilized along with a monoclinic distortion of the crystal structure at low temperatures (T ). With increasing T , two successive phase transitions occur, (i) AFI to PI (paramagnetic insulator) magnetic transition at the Neel temperature T N , and (ii) PI to PM (paramagnetic metal) transition at T IM associated with structural transition from the monoclinic (P 2 1 /n) to orthorhombic (P bnm) symmetries 6-8 . Due to the complex interplay between the structural distortions and Ni−O orbital interactions, the nature of the AFI-PI and PI-PM transitions remains poorly understood, in spite of many experimental investigations in the past 9-13 .SmNiO 3 is unique in the sense that it exists in the intermediate regime between strong and weak interelectron interaction regimes, and displays the highest T N , in the rare earth nickelate family. For smaller ionic radii, i.e. for R = Sm, Eu, Gd, Dy, etc, where T N < T IM , the PI-PM transition is suggested to be first order in nature 1,14 , although the microscopic details of this first order phase transition remains obscured. For SmNiO 3 , the only evidence so far for a structural transition at T IM is an indirect Raman comparison with NdNiO 3 (Ref 10 ). While the conventional time-averaged electrical resistivity measurements can indicate an overall change in the nature of electronic states, i.e. from an insulator to a metal, alternative experim...

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Simple kinetic sensor to structural transitions

Cited by 9 publications

References 29 publications

Low‐Frequency Electronic Noise in Quasi‐2D van der Waals Antiferromagnetic Semiconductor FePS₃—Signatures of Phase Transitions

Low‐Frequency Electronic Noise in Quasi‐2D van der Waals Antiferromagnetic Semiconductor FePS₃—Signatures of Phase Transitions

Unravelling the low-temperature metastable state in perovskite solar cells by noise spectroscopy

Conductivity noise study of the insulator-metal transition and phase coexistence in epitaxial samarium nickelate thin films

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Simple kinetic sensor to structural transitions

Cited by 9 publications

References 29 publications

Low‐Frequency Electronic Noise in Quasi‐2D van der Waals Antiferromagnetic Semiconductor FePS3—Signatures of Phase Transitions

Low‐Frequency Electronic Noise in Quasi‐2D van der Waals Antiferromagnetic Semiconductor FePS3—Signatures of Phase Transitions

Unravelling the low-temperature metastable state in perovskite solar cells by noise spectroscopy

Conductivity noise study of the insulator-metal transition and phase coexistence in epitaxial samarium nickelate thin films

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Low‐Frequency Electronic Noise in Quasi‐2D van der Waals Antiferromagnetic Semiconductor FePS₃—Signatures of Phase Transitions

Low‐Frequency Electronic Noise in Quasi‐2D van der Waals Antiferromagnetic Semiconductor FePS₃—Signatures of Phase Transitions