Simple model for the dielectric constant of nanoscale silicon particle

Tsu, Raphael; Babić, Davorin; Ioriatti, L.

doi:10.1063/1.365762

Cited by 129 publications

(96 citation statements)

References 16 publications

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“…Large static dielectric constants are observed in bulk V-VI-VII materials, because a halide with ns 2 ions (e.g., Sb 3+ , Sn 2+ ) usually has enhanced cationanion hybridization that increases lattice polarization. [31,33] However, as the size approaches several nanometers, reduction in becomes significant, [50] because electrons and holes are bound in quantized states. The static dielectric constants of 1D V-VI-VII materials along the covalently bonded 1D axis become much smaller than their bulk counterparts.…”

Section: Numerical Results and Discussionmentioning

confidence: 99%

1D SbSeI, SbSI, and SbSBr With High Stability and Novel Properties for Microelectronic, Optoelectronic, and Thermoelectric Applications

Peng

Zhang

et al. 2018

Advcd Theory and Sims

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Mechanical exfoliation of 2D materials has triggered an explosive interest in low dimensional material research. We extend this idea to 1D van der-Waals materials. Three 1D semiconductors (SbSeI, SbSI, and SbSBr) with high stability and novel electronic properties are discovered using first principles calculations. Both the dynamical and the thermal stability of these 1D materials are examined. We demonstrate that their nanowire thinner than 7Å can be easily obtained by mechanical exfoliation, hydrothermal method, or sonochemical method. The bulk-to-1D transition results in dramatic changes in band gap, effective mass, and static dielectric constant due to quantum confinement, making 1D SbSeI a highly promising channel material for transistors with gate length shorter than 1 nm. Under small uniaxial strain, these materials are transformed from indirect into direct band gap semiconductors, paving the way for optoelectronic devices and mechanical sensors. Moreover, the thermoelectric performance of these materials is significantly improved over their bulk counterparts. These highly desirable properties render SbSeI, SbSI, and SbSBr promising 1D materials for applications in future microelectronics, optoelectronics, mechanical sensors, and thermoelectrics.

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Section: Numerical Results and Discussionmentioning

confidence: 99%

1D SbSeI, SbSI, and SbSBr With High Stability and Novel Properties for Microelectronic, Optoelectronic, and Thermoelectric Applications

Peng

Zhang

et al. 2018

Advcd Theory and Sims

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“…If the eeh separation, r eeh , is considerably larger than the localization length, R 0 , the probability of the radiation recombination is extremely small. On the other hand, the involved dielectric constant 3 r is no longer constant but it is size dependent [498,497].…”

Section: Hamiltonian Perturbationmentioning

confidence: 99%

“…These dedicated observations confirm that the particle size and oxidation have important effects on the core-level shift of nanometric compounds, which is of great value in understanding the nature of nanometric systems. (iv) Because of E G expansion, the complex dielectric constant of a nanometric semiconductor is significantly suppressed [497], which forms enormous impact in electronic and optical devices. The reduction of dielectric constant can enhance the Coulomb interaction among electrons, holes, and ionized shallow impurities in nanometric devices, and enhances the exciton binding energy [498].…”

Section: Introductionmentioning

confidence: 99%

Size dependence of nanostructures: Impact of bond order deficiency

Sun

2007

Progress in Solid State Chemistry

826

717

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“…For the treatment of Coulomb interaction we follow references [60,61]. While often the direct Coulomb interaction is assumed to be screened by the static dielectric constant of the bulk material bulk r = 9.2 [58], other studies [58,[62][63][64] indicate a reduction of r in QDs, e.g., due to a decrease of phononic screening. Here, we use r = 7.4 to fit the experimental data.…”

Section: Energetic Structure Of Cdse/znse Quantum Dotsmentioning

confidence: 99%

Charge and spin control of ultrafast electron and hole dynamics in single CdSe/ZnSe quantum dots

et al. 2018

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We study the dynamics of photoexcited electrons and holes in single negatively charged CdSe/ZnSe quantum dots with two-color femtosecond pump-probe spectroscopy. An initial characterization of the energy level structure is performed at low temperatures and magnetic fields of up to 5 T. Emission and absorption resonances are assigned to specific transitions between few-fermion states by a theoretical model based on a configuration interaction approach. To analyze the dynamics of individual charge carriers, we initialize the quantum system into excited trion states with defined energy and spin. Subsequently, the time-dependent occupation of the trion ground state is monitored by spectrally resolved differential transmission measurements. We observe subpicosecond dynamics for a hole excited to the D shell. The energy dependence of this D-to-S shell intraband transition is investigated in quantum dots of varying size. Excitation of an electron-hole pair in the respective p shells leads to the formation of singlet and triplet spin configurations. Relaxation of the p-shell singlet is observed to occur on a time scale of a few picoseconds. Pumping of p-shell triplet transitions opens up two pathways with distinctly different scattering times. These processes are shown to be governed by the mixing of singlet and triplet states due to exchange interactions enabling simultaneous electron and hole spin flips. To isolate the relaxation channels, we align the spin of the residual electron by a magnetic field and employ laser pulses of defined helicity. This step provides ultrafast preparation of a fully inverted trion ground state of the quantum dot with near unity probability, enabling deterministic addition of a single photon to the probe pulse. Therefore our experiments represent a significant step towards using single quantum emitters with well-controled inversion to manipulate the photon statistics of ultrafast light pulses.

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Simple model for the dielectric constant of nanoscale silicon particle

Cited by 129 publications

References 16 publications

1D SbSeI, SbSI, and SbSBr With High Stability and Novel Properties for Microelectronic, Optoelectronic, and Thermoelectric Applications

1D SbSeI, SbSI, and SbSBr With High Stability and Novel Properties for Microelectronic, Optoelectronic, and Thermoelectric Applications

Size dependence of nanostructures: Impact of bond order deficiency

Charge and spin control of ultrafast electron and hole dynamics in single CdSe/ZnSe quantum dots

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