Simple Modeling and Analysis of Total Ionizing Dose Effects on Radio-Frequency Low-Noise Amplifiers
Taeyeong Kim,
Gyungtae Ryu,
Jongho Lee
et al.
Abstract:In this study, the degradation characteristics of radio frequency (RF)-low-noise amplifiers (LNA) due to a total ionizing dose (TID) is investigated. As a device-under-test (DUT), sample LNAs were prepared using silicon–germanium (SiGe) heterojunction bipolar transistors (HBTs) as core elements. The LNA was based on a cascode stage with emitter degeneration for narrowband applications. By using a simplified small-signal model of a SiGe HBT, design equations such as gain, impedance matching, and noise figure (N… Show more
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