Simple solar cells of 3.5% efficiency with antimony sulfide‐selenide thin films

Abstract

Thin films of antimony sulfide‐selenide solid solutions (Sb2Sx Se3–x) were prepared by chemical bath deposition and thermal evaporation to constitute solar cells of a transparent conductive oxide (FTO)/CdS/Sb2Sx Se3–x/C–Ag. The cell parameters vary depending on the sulfide‐selenide composition in the films. The best solar cell efficiency of 3.6% was obtained with a solid solution Sb2S1.5Se1.5 prepared by thermal evaporation of the precipitate for which the open circuit voltage is 0.52 V and short circuit current density, 15.7 mA/cm2under AM 1.5G (1000 W/m2) solar radiation. For all‐chemically deposited solar cells of Sb2S1.1Se1.9 absorber, these values are: 2.7%, 0.44 V, and 15.8 mA/cm2, and for Sb2S0.8Se2.2, they are: 2.5%, 0.38 V and 18 mA/cm2. (© 2016 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim)

Influence of the electron buffer layer on the photovoltaic performance of planar Sb2(SxSe1‐x)3 solar cells

“…However, we reported that the chemical precipitate is rich in elemental selenium, and hence, the composition is shifted toward Sb 2 S 1.5 Se 1.5 . 26 If E g of bulk Sb 2 S 3 (1.88 eV) and Sb 2 Se 3 (1.1 eV) and proportional variation of E g are valid for this solid solution, its value for this thin film would be 1.49 eV. In the thermal evaporation, the source to substrate distance was 40 cm.…”

“…Thin film of Sb 2 (S x Se 1‐ x ) 3 was deposited onto the various electron buffer layers by vacuum thermal evaporation of a powder mixture containing 300 mg Sb 2 S 3 powder (Aldrich) and 300 mg Sb 2 Se 3 precipitate, which was obtained from a modified chemical solution reported in Pérez‐Martínez et al When the formula masses of Sb 2 S 3 (340 g) and Sb 2 Se 3 (480 g) are considered, and no relative loss of component elements occurs, the composition of the thin film would be Sb 2 S 1.75 Se 1.25 . However, we reported that the chemical precipitate is rich in elemental selenium, and hence, the composition is shifted toward Sb 2 S 1.5 Se 1.5 . If E g of bulk Sb 2 S 3 (1.88 eV) and Sb 2 Se 3 (1.1 eV) and proportional variation of E g are valid for this solid solution, its value for this thin film would be 1.49 eV.…”

“…Such heating would cause carbon diffusion into Sb 2 (S x Se 1‐ x ) 3 , creating an interfacial layer of increased p‐type conductivity. Without such heating, the J sc of the solar cells would be considerably less . To complete the device fabrication, silver contacts were painted on the graphite electrode.…”

On the Stability of Operation of Antimony Sulfide Selenide Thin Film Solar Cells Under Solar Radiation

“…The precipitate was recovered by filtration. It was rinsed with deionized water, dried and stored . The EDS of this precipitate showed Sb:S:Se proportion of 36:4:60.…”

“…The optical bandgap ( E g ) of such materials may be continuously varied between 1.1 eV (Sb 2 Se 3 ) and 1.88 eV (Sb 2 S 3 ), thereby offering in them E g of 1.3–1.6 eV recommended for successful solar cells . Solar cells have been prepared by thermal evaporation of powder samples of precipitates and/or commercial Sb 2 S 3 powder with solar‐to‐electric energy conversion efficiency ( η ) of up to 4.27% . Progress made in thin film solar cells of Sb 2 S x Se 3‐x produced by various modifications of thermal evaporation and/or postdeposition processing of the cell structures with η close to 7% has been reviewed in 2016–2017 .…”