Simplified parameter extraction method for single and back-to-back Schottky diodes fabricated on silicon-on-insulator substrates

Abstract

We describe a technique to extract room temperature parameters of Schottky diodes based on single or double-terminal configurations whose barrier height is bias dependent. This method allows us to extract the zero bias barrier height without specific knowledge of interface states or the existence of insulator layers at the metal-semiconductor boundaries. This technique enables us to establish the type of thermionic emission mechanism, limited by a bias dependent image force potential and/or diffusion, taking into account interfacial states or layers. This technique makes use of experimental current-voltage (I-V) characteristics measured at both bias polarities and different intensities of illumination and the corresponding voltage-dependent differential slope-voltage characteristics α=dln(I)/dln(V). This method is verified experimentally on a conventional p-Silicon based Schottky diode and on metal-semiconductor and metal-insulator-semiconductor diodes fabricated on n-silicon-on-insulator substrates. Pd/Au Schottky electrodes were used, while the insulator stack of the metal-insulator-semiconductor diodes comprises an HfO2 layer on top of an SiO2 layer.

Mechanism of Highly Efficient Electron Emission from a Graphene/Oxide/Semiconductor Structure

“…To investigate the above speculations, we evaluated the current conduction mechanism in the GOS structure by analyzing the power exponent parameter α = d­(ln I )/d­(ln V ). − The α–voltage (α– V ) plot is highly sensitive to the current conduction mechanism of dielectric films. Very slight changes in the current conduction such as carrier depletion can be detected, and multiple conduction mechanisms (i.e., FN tunneling and PF emission) can be identified and their fractions can be quantitatively determined .…”

Gallium Selenide Nanoribbons on Silicon Substrates for Photodetection

“…For voltages beyond ±10 V, the current deviates from being completely flat and shows an increasing trend as the electric field increases (see Figure d). Within this region, the current is proportional to V 1/4 consistent with field-induced barrier lowering . To further investigate this effect, we have extracted the activation energy of 0.23 and 0.2 eV at 9 and 20 V, respectively, using the Arrhenius plot of current versus q / k B T , showing consistency with the field-induced barrier lowering.…”

“…Within this region, the current is proportional to V 1/4 consistent with field-induced barrier lowering. 74 To further investigate this effect, we have extracted the activation energy of 0.23 and 0.2 eV at 9 and 20 V, respectively, using the Arrhenius plot of current versus q/k B T, showing consistency with the field-induced barrier lowering. It is anticipated that at higher temperatures, the conductivity of Ga oxide increases and hence a larger fraction of the applied voltage drops across the barriers.…”

“…When the structure is illuminated, current increases and a symmetric IV response is obtained, as shown in Figure 7d, consistent with photogenerated carriers reducing the GaSe NR resistance, resulting in the applied voltage dropping primarily across the contact regions of the back-to-back Schottky diode (BtB-SD) structure. 74 It is noted that the contact region is comprised of a Ni/Ga oxide/GaSe structure and not a direct contact of the metal to the GaSe. To evaluate the hypothesis of a BtB-SD, I−V data at 100 °C, as an example, is fitted using the BtB-SD equation.…”

Extraction and Analysis of the Characteristic Parameters in Back‐to‐Back Connected Asymmetric Schottky Diode

“…In recent years, nevertheless, parameter extraction techniques based on artificial intelligence using all kinds of algorithms have been developed, such as genetic algorithm, simulated annealing algorithm, and differential evolution method, providing us a more accurate fitting scheme . In addition, some methods for parameter extraction in back‐to‐back connected Schottky contacts were also developed in the last few years . Nouchi found the identical region between MS contact and metal–semiconductor–metal (MSM) contact .…”