2021
DOI: 10.1016/j.renene.2021.08.054
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Simplified process flow for the fabrication of PERC solar cells with ion implanted emitter

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Cited by 8 publications
(2 citation statements)
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“…Besides, the n ++ back surface field (BSF) is typically created by phosphorus (P) doping, which can be done by either ion implantation or diffusion methods. Dopant activation following P‐implantation and POCl 3 diffusion processes can be performed at lower thermal budgets below 900°C 21,22 …”
Section: Introductionmentioning
confidence: 99%
“…Besides, the n ++ back surface field (BSF) is typically created by phosphorus (P) doping, which can be done by either ion implantation or diffusion methods. Dopant activation following P‐implantation and POCl 3 diffusion processes can be performed at lower thermal budgets below 900°C 21,22 …”
Section: Introductionmentioning
confidence: 99%
“…Comparison of PV parameters of the simulated PERC device with recent experimental PERC performances21,[76][77][78][79][80] J SC (mA cm À2 )…”
mentioning
confidence: 99%