Simplified Route for Deposition of Binary and Ternary Bismuth Sulphide Thin Films for Solar Cell Applications

Abstract

For photovoltaic applications, undoped and Ni2+ doped Bi2S3 thin films were chemically deposited onto glass substrates at room temperature. Elemental diffraction analysis confirmed the successful Ni2+ incorporation in the range of 1.0 to 2.0 at. %, while X-ray Diffraction analysis revealed that orthorhombic crystal lattice of Bi2S3 was conserved while transferring from binary to ternary phase. Scanning electron microscopy images reported homogeneous and crack-free morphology of the obtained films. Optoelectronic analysis revealed that the bandgap value was shifted from 1.7 to 1.1 eV. Ni2+ incorporation also improved the carrier concentration, leading to higher electrical conductivity. Resultant optoelectronic behavior of ternary Bi2−x NixS3 thin films suggests that doping is proved to be an effectual tool to optimize the photovoltaic response of Bi2S3 for solar cell applications.

Engineering the optical properties of nickel sulphide thin films by zinc integration for photovoltaic applications

“…19 To produce desirable materials for specic applications, phase-controlled synthesis techniques must be developed. [20][21][22] Numerous methods, such as hydrothermal, solvothermal, microwave methods, wet chemical methods, and chemical bath deposition, have been used to deposit NiS nanoparticles in the form of thin lms. [23][24][25] The most effective technique for creating semiconducting thin lms is chemical bath deposition (CBD).…”