SIMS analysis of oxynitrides: evidence for nitrogen diffusion induced by oxygen flooding

Witte, H. De; Conard, Thierry; Vandervorst, Wilfried; Gijbels, R.

doi:10.1002/1096-9918(200011)29:11<761::aid-sia926>3.0.co;2-f

Cited by 7 publications

(5 citation statements)

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“…Two ions, Al 2 + and Al 2 O + , were selected to study the effect of the oxygen flooding because the intensities of Al + and AlO + were too high for the channeltron detector used here. For Ar + sputtering, the enhancement effect was insignificant because only a trace amount of oxygen adsorbed to the surface when the oxygen pressure was 5 × 10 –6 Pa (a considerably lower pressure than the typical oxygen pressure of 10 –3 –10 –4 Pa during oxygen flooding). , Conversely, the enhanced oxygen uptake associated with C 60 + sputtering resulted in a clearly enhanced Al 2 O + intensity although the Al 2 + signal was only moderately enhanced.…”

Section: Resultsmentioning

confidence: 98%

Dramatically Enhanced Oxygen Uptake and Ionization Yield of Positive Secondary Ions with C₆₀⁺ Sputtering

et al. 2012

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To explore C(60)(+) sputtering beyond low-damage depth profiling of organic materials, X-ray photoelectron spectrometry (XPS) and secondary ion mass spectrometry (SIMS) were used to examine metallic surfaces during and after C(60)(+) sputtering. During C(60)(+) sputtering, XPS spectra indicated that the degrees of carbon deposition were different for different metallic surfaces. Moreover, for some metals (e.g., Al, W, Ta, Ti, and Mo), the intensity of the O 1s photoelectron increased significantly during C(60)(+) sputtering, even though the instrument was under ultrahigh vacuum (<5 × 10(-7) Pa). This result indicated that the rate of oxygen uptake was greater than the rate of C(60)(+) sputtering. This behavior was not observed with the commonly used Ar(+) sputtering. To measure the oxygen uptake kinetics, pure oxygen was leaked into the chamber to maintain a 5 × 10(-6) Pa oxygen environment. The C(60)(+)-sputtered surface had a clearly increased rate of oxygen uptake than the Ar(+)-sputtered surface, even for moderately reactive metals such as Fe and Ni. For relatively nonreactive metals such as Cu and Au, a small amount of carbon was implanted and no oxygen uptake was observed. High-resolution XPS spectra revealed the formation of metal carbides on these reactive metals, and the carbon deposition and enhanced uptake of oxygen correlated to the carbide formation. Because oxygen enhances the secondary ion yield through surface passivation, the enhanced oxygen uptake due to C(60)(+) sputtering could be beneficial for SIMS analysis. To examine this hypothesis, C(60)(+) and Ar(+) were used as primary ions, and it was found that the intensity enhancement (because of the oxygen flooding at 5 × 10(-6) Pa) was much higher with C(60)(+) than with Ar(+). Therefore, oxygen flooding during C(60)(+) sputtering has a great potential for enhancing the detection limit due to the enhanced oxygen uptake.

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Section: Resultsmentioning

confidence: 98%

Dramatically Enhanced Oxygen Uptake and Ionization Yield of Positive Secondary Ions with C₆₀⁺ Sputtering

et al. 2012

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“…In addition, the ratio of oxidized Si 2p and substrate Si 2p intensities corresponded to an interface thickness of ϳ0.7 nm, which is in good agreement with the TEM measurement. The TOF-SIMS profiles were compared to the depth profiles of ALD ZrO 2 /SiO 2 /Si samples 54,55 to confirm the mixing of Zr and Si in the asdeposited samples. The mixing thus suggests the formation of zirconium silicate.…”

Section: A Zro 2 õZrsi X O Y õSimentioning

confidence: 99%

Interfacial properties of ZrO2 on silicon

Lin

Puthenkovilakam

Chang

et al. 2003

Journal of Applied Physics

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Electrical and spectroscopic comparison of HfO 2 / Si interfaces on nitrided and un-nitrided Si (100) Yttrium silicate formation on silicon: Effect of silicon preoxidation and nitridation on interface reaction kinetics The interface of zirconium oxide thin films on silicon is analyzed in detail for their potential applications in the microelectronics. The formation of an interfacial layer of ZrSi x O y with graded Zr concentration is observed by the x-ray photoelectron spectroscopy and secondary ion mass spectrometry analysis. The as-deposited ZrO 2 /ZrSi x O y /Si sample is thermally stable up to 880°C, but is less stable compared to the ZrO 2 /SiO 2 /Si samples. Post-deposition annealing in oxygen or ammonia improved the thermal stability of as-deposited ZrO 2 /ZrSi x O y /Si to 925°C, likely due to the oxidation/nitridation of the interface. The as-deposited film had an equivalent oxide thickness of ϳ1.3 nm with a dielectric constant of ϳ21 and a leakage current of 3.2ϫ10 Ϫ3 A/cm 2 at Ϫ1.5 V. Upon oxygen or ammonia annealing, the formation of SiO x and SiH x N y O z at the interface reduced the overall dielectric constants.

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“…The broadening of the nitrogen profile is believed to be caused by ion induced diffusion, since nitrogen in oxynitrides is relatively mobile under ion beam bombardment. 18,19 This is further supported by the weaker bond strength of Si-N ͑470.0Ϯ15.0 kJ/mol͒ relative to Si-O ͑799.6Ϯ13.4 kJ/mol͒. 20 The nitrogen atoms in SiO 2 are believed to be kinetically trapped in a nonequilibrium state near the interface or at defect sites in the oxide.…”

Section: Resultsmentioning

confidence: 96%

Investigation of boron penetration through decoupled plasma nitrided gate oxide using backside secondary ion mass spectrometry depth profiling

Yeo

Wee

Liu

et al. 2003

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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Evaluation of back-side secondary ion mass spectrometry for boron diffusion in silicon and silicon-on-insulator substrates J. Appl. Phys. 96, 3692 (2004); 10.1063/1.1782959 Secondary ion mass spectrometry characterization of source/drain junctions for strained silicon channel metal-oxide-semiconductor field-effect transistors Approach to the characterization of through-oxide boron implantation by secondary ion mass spectrometry High drive-in temperature during dopant activation of p ϩ -poly metal-oxide-semiconductor field effect transistors causes boron penetration through the thin gate oxide, which degrades the device performance. Conventional secondary ion mass spectrometry ͑SIMS͒ depth profiling is unable to accurately analyze boron penetration under rapid thermal annealing conditions due to ion knock-on and mixing effects. With the development of backside SIMS depth profiling technique using SOI wafers ͓Yeo et al., Surf. Interface Anal. 33, 373 ͑2002͒; Runsheim et al., J. Vac. Sci. Technol. B 20, 448 ͑2002͔͒, quantification of the amount of boron penetration becomes possible. In this article, boron penetration through decoupled plasma nitridation silicon dioxide was studied by performing both front and backside depth profiling using 0.5 keV O 2 ϩ with oxygen flooding and 2 keV Cs ϩ primary ions at oblique incidence in a Cameca IMS-6f SIMS instrument.

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SIMS analysis of oxynitrides: evidence for nitrogen diffusion induced by oxygen flooding

Cited by 7 publications

References 4 publications

Dramatically Enhanced Oxygen Uptake and Ionization Yield of Positive Secondary Ions with C₆₀⁺ Sputtering

Dramatically Enhanced Oxygen Uptake and Ionization Yield of Positive Secondary Ions with C₆₀⁺ Sputtering

Interfacial properties of ZrO2 on silicon

Investigation of boron penetration through decoupled plasma nitrided gate oxide using backside secondary ion mass spectrometry depth profiling

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SIMS analysis of oxynitrides: evidence for nitrogen diffusion induced by oxygen flooding

Cited by 7 publications

References 4 publications

Dramatically Enhanced Oxygen Uptake and Ionization Yield of Positive Secondary Ions with C60+ Sputtering

Dramatically Enhanced Oxygen Uptake and Ionization Yield of Positive Secondary Ions with C60+ Sputtering

Interfacial properties of ZrO2 on silicon

Investigation of boron penetration through decoupled plasma nitrided gate oxide using backside secondary ion mass spectrometry depth profiling

Contact Info

Product

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Dramatically Enhanced Oxygen Uptake and Ionization Yield of Positive Secondary Ions with C₆₀⁺ Sputtering

Dramatically Enhanced Oxygen Uptake and Ionization Yield of Positive Secondary Ions with C₆₀⁺ Sputtering