SIMS analysis of residual gas elements with a Cameca IMS-6f ion microprobe

Kudriavtsev, Yu.; Villegas, A.; Godines, A.; Asomoza, R.

doi:10.1016/j.apsusc.2005.05.064

Cited by 15 publications

(13 citation statements)

References 6 publications

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“…Since the ion gauge is mounted at a considerable distance from the sample, we used the approach of Kudriavtsev to correlate the pressure measurement to the partial pressure of oxygen at the sample surface. 13 In this procedure, the oxygen background concentration is measured on a sample taken from a bare float-zone silicon wafer using different primary ion current densities. The data were quantified using an 16 O ion implantation in Si with known dose.…”

Section: Methodsmentioning

confidence: 99%

“…A validation of this assumption and a detailed description of the method that was used is given elsewhere. 13 Using this method, a sensitivity factor could be obtained to calibrate the partial pressure of oxygen at the sample to the pressure at the ion gauge. For our setup, it was found that the reading at the ion gauge is a factor of 7.1 lower than the partial pressure of oxygen during flooding.…”

Section: Methodsmentioning

confidence: 99%

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The effect of oxygen during irradiation of silicon with low energy Cs+ ions

Berghmans

Vandervorst

2009

Journal of Applied Physics

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The effect of oxygen flooding during ultralow energy SIMS depth profiling of silicon with Cs + primary ions is presented. New experimental data show the effective sputtering yield of silicon in the presence of oxygen, as well as the energy distribution of the secondary Si − ions. It is found that the component sputtering yield of Si is very sensitive to minute amounts of oxygen in the proximity of the sputtered surface. At these very low flooding pressures ͑in the 10 −9 -10 −8 mbar range͒, one cannot account for a full oxidation in the time frame of a typical measurement; it is concluded that in this particular case, which is technologically very relevant, small traces of oxygen will change the desorption characteristics of cesium as well as silicon. It shows that oxygen that is adsorbed to the silicon surface provides an attachment site for impinging cesium ions and thereby increases the retention capacity of cesium tremendously. Also, oxygen changes the secondary ion yield and can even promote the desorption of Si from the analysis surface.

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Section: Methodsmentioning

confidence: 99%

Section: Methodsmentioning

confidence: 99%

The effect of oxygen during irradiation of silicon with low energy Cs+ ions

Berghmans

Vandervorst

2009

Journal of Applied Physics

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“…(iii) The absorption of chamber gases onto the sample surface contributes a background to the secondary ion mass spectrum, and causes a nonlinear dependence of the SIMS signal upon the primary beam current and scan area [25,26].…”

Section: Effect Of Chambermentioning

confidence: 99%

High Spatial Resolution Time-of-Flight Secondary Ion Mass Spectrometry for the Masses: A Novel Orthogonal ToF FIB-SIMS Instrument withIn SituAFM

Whitby

Östlund

Horváth

et al. 2012

Advances in Materials Science and Engineering

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We describe the design and performance of an orthogonal time-of-flight (TOF) secondary ion mass spectrometer that can be retrofitted to existing focused ion beam (FIB) instruments. In particular, a simple interface has been developed for FIB/SEM instruments from the manufacturer Tescan. Orthogonal extraction to the mass analyser obviates the need to pulse the primary ion beam and does not require the use of monoisotopic gallium to preserve mass resolution. The high-duty cycle and reasonable collection efficiency of the new instrument combined with the high spatial resolution of a gallium liquid metal ion source allow chemical observation of features smaller than 50 nm. We have also demonstrated the integration of a scanning probe microscope (SPM) operated as an atomic force microscope (AFM) within the FIB/SEM-SIMS chamber. This provides roughness information, and will also allow true three dimensional chemical images to be reconstructed from SIMS measurements.

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“…This may be generally referred to as the background signal and is produced when molecules or contaminations adsorbed in the vicinity of the samples become involved as secondary ions via the sputtering process. To address this issue, in addition to the fabrication of an analytical chamber with a high vacuum, the cleaning of samples and the sample holder to eliminate residual components, 1,5 presputtering, 6–8 and optimization of the analytical conditions 1,9,10 are effective steps.…”

Section: Introductionmentioning

confidence: 99%

Behavior and process of background signal formation of hydrogen, carbon, nitrogen, and oxygen in silicon wafers during depth profiling using dual‐beam TOF‐SIMS

Sameshima

Numao

2021

Surface & Interface Analysis

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The behavior and mechanism of background signals during depth profiling of atmospheric elements using dual‐beam time‐of‐flight secondary ion mass spectrometry (TOF‐SIMS) have been experimentally investigated for silicon wafers. The background signals of atmospheric elements were found to be inversely proportional to the sputtering rate. Most of the background signals are largely attributable to the accumulation of components through adsorption and ion bombardment in the pre‐equilibrium state. On the other hand, the contribution of real‐time adsorption during the instant after the last sputtering in the equilibrium state is negligible under the present experimental conditions. H2O is dominant in the background formation process of hydrogen and oxygen, which is supported by the higher adsorption coefficients. The background levels of carbon and nitrogen are lower than those of hydrogen and oxygen. Furthermore, the background signal of carbon with respect to the sputtering rate shows a different trend than the other elements. This could be attributed to accumulation in the pre‐equilibrium state. These results indicate that the background levels can be lowered close to those of dynamic‐SIMS by using an extremely high sputtering rate in dual‐beam TOF‐SIMS.

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SIMS analysis of residual gas elements with a Cameca IMS-6f ion microprobe

Cited by 15 publications

References 6 publications

The effect of oxygen during irradiation of silicon with low energy Cs+ ions

The effect of oxygen during irradiation of silicon with low energy Cs+ ions

High Spatial Resolution Time-of-Flight Secondary Ion Mass Spectrometry for the Masses: A Novel Orthogonal ToF FIB-SIMS Instrument withIn SituAFM

Behavior and process of background signal formation of hydrogen, carbon, nitrogen, and oxygen in silicon wafers during depth profiling using dual‐beam TOF‐SIMS

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