SIMS characterization of thin layers of IR and its silicides

Blanco, J.M.; Serrano, J. J.; Jimenez‐Leube, J.; Rodrı́guez, T.; Aguilar, Miguel; Gwilliam, R.

doi:10.1016/0168-583x(95)01385-7

Cited by 2 publications

(1 citation statement)

References 3 publications

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“…13 First, SIMS does not give information about the chemical bound of the species and does not have enough lateral resolution to analyze the composition of individual crystals. 13 First, SIMS does not give information about the chemical bound of the species and does not have enough lateral resolution to analyze the composition of individual crystals.…”

Section: Layer Characterizationmentioning

confidence: 99%

Effect of the in situ thermal treatments on Ir/n-type Si (111) Schottky contacts

Jiménez-Leube¹

1997

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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In this article we analyze the effect of the in situ thermal treatments on the properties of the Ir/ n-type Si ͑111͒ Schottky contacts. The samples were annealed in the evaporation system at 400°C for 15 min and at 450°C for 15 min or 2 h. Rutherford backscattering spectroscopy spectra and secondary ion mass spectroscopy compositional profiles indicate that as result of the different thermal treatments performed in the samples there is a clear diffusion of silicon into the iridium layer but the composition of the metal-semiconductor interface cannot be determined. It has been shown previously that a small quantity of IrSi can be formed at an Ir-Si interface when Ir layers are deposited on Si. The current-voltage-temperature ͑I-V-T͒ behavior of these diodes indicates that it is dominated by the effect of spatial fluctuations of the surface barrier. After the thermal treatment at 400°C for 15 min the diodes show I-V characteristics that can be perfectly justified by the unidimensional model of the thermionic emission theory. The Schottky barrier value at 0 K ͑0.92 eV͒ and the temperature coefficient of the barrier ͑3•10 Ϫ4 V/K͒ corresponds with that previously reported for the IrSi. When the annealing temperature is raised to 450°C, the resulting devices show a nonhomogeneous barrier with similar values to those found at room temperature. Increasing the annealing time to 2 h leads to devices showing an increase in the ideality factor value ͑1.12͒, along with a barrier height value at room temperature ͑0.86 eV͒ which coincides with that previously reported for the IrSi 1.75 . The 0 K barrier height ͑0.72 eV͒ indicates that a phase transformation at the interface has taken place.

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Section: Layer Characterizationmentioning

confidence: 99%