Simulated monolithically integrated single photon counter

Cronin, D.; Moloney, Aoife M.; Morrison, Alan P.

doi:10.1109/hfpsc.2004.1360336

Cited by 9 publications

(1 citation statement)

References 12 publications

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“…These reset transistors are equivalent of the three low resistance transistors, which resets the quiescent bias of the SPAD and brings the SPAD's cathode voltage back to detect the next photon. Short duration of the reset time decreases the dead time between photon counts [42].…”

Section: Operations and Circuits Of Siapdmentioning

confidence: 99%

CMOS silicon avalanche photodiodes for NIR light detection: a survey

Sultana

Kamrani

2011

Analog Integr Circ Sig Process

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This paper surveys recent research on CMOS silicon avalanche photodiodes (SiAPD) and presents the design of a SiAPD based photoreceiver dedicated to nearinfrared spectroscopy (NIRS) application. Near-infrared spectroscopy provides an inexpensive, non-invasive, and portable means to image brain function, and is one of the most efficient diagnostic techniques of different neurological diseases. In NIRS system, brain tissue is penetrated by near-infrared (NIR) radiation and the reflected signal is captured by a photodiode. Since the reflected NIR signal has very low amplitude, SiAPD is a better choice than regular photodiode for NIR signal detection due to SiA-PD's ability to amplify the photo generated signal by avalanche multiplication. Design requirements of using CMOS SiAPDs for NIR light detection are discussed, and the challenges of fabricating SiAPDs using standard CMOS process are addressed. Performances of state-ofthe-art CMOS SiAPDs with different device structures are summarized and compared. The efficacy of the proposed SiAPD based photoreceiver is confirmed by post layout simulation. Finally, the SiAPD and its associated circuits has been implemented in one chip using 0.35 lm standard CMOS technology for an integrated NIRS system.

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Section: Operations and Circuits Of Siapdmentioning

confidence: 99%