Simulating a perpendicular exchange-biased structure with a partially covering nonmagnetic insertion at the FM/AFM interface

Abstract

Abstract:The existence of minority spins, opposite to the perpendicular exchange bias, and majority spins aligned with this bias, and the dependence of the perpendicular exchange-bias field on the imprint effect, caused by the partially covering spacer at the ferromagnetic/antiferromagnetic (FM/AFM) interface, have been studied using Ising-type simulations. The present investigation suggests that the main factors influencing this phenomenon were dependent on the FM/AFM interface morphology, the balance between FM/AFM coupling and the FM-spins coupling, and the numerical balance between minority and majority spins. It was also determined that the imprint phenomenon can be used to enhance the perpendicular exchange-bias for small partial insertions at the FM/AFM interface.

Spreadsheet analysis of stability and meta-stability of low-dimensional magnetic particles using the Ising approach

“…The main quantity guiding a given system under study is the total energy. Looking at the energy state of a given local cell, it is assumed that its local energy depends on four factors of interaction with the surrounding cells, similar to the random field Ising model [28][29][30][31]. Namely, these are: energy resulting from the cell interaction with the four nearest neighbours (1), the random energy of thermal origin (2), and the energy of an externally applied magnetic field (3).…”