2007
DOI: 10.1109/ats.2007.4388023
|View full text |Cite
|
Sign up to set email alerts
|

Simulating Open-Via Defects

Abstract: Open-via defects are a major systematic failure mechanism in nanoscale manufacturing processes. We present a flow for simulating open-via defects. Electrical parameters are extracted from the layout and technology data and represented in a way which allows efficient simulation on gate level. The simulator takes oscillation caused by open-via defects into account and quantifies its impact on defect coverage. The flow can be employed for manufacturing test as well as for defect diagnosis.

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
1

Citation Types

0
1
0

Year Published

2008
2008
2008
2008

Publication Types

Select...
1

Relationship

1
0

Authors

Journals

citations
Cited by 1 publication
(1 citation statement)
references
References 12 publications
0
1
0
Order By: Relevance
“…We laid out ISCAS 85 circuits and extracted the parasitic coupling capacitances CC using the flow outlined in [18]. We applied our ATPG to the complete list of both inter-and intra-layer interconnect opens.…”
Section: Resultsmentioning
confidence: 99%
“…We laid out ISCAS 85 circuits and extracted the parasitic coupling capacitances CC using the flow outlined in [18]. We applied our ATPG to the complete list of both inter-and intra-layer interconnect opens.…”
Section: Resultsmentioning
confidence: 99%