Simulating the response of SOS CMOS building blocks to pulsed ionizing irradiation

The Influence of Device Geometry on the Partially Depleted Soi Transistor Tid Hardness

“…Radiation induced threshold voltage shift of this structure leads to leakage current increase and can cause parametrical failure of the complex device due to increased current supply. Radiation hardness research of separate transistors can offer opportunity to evaluate complex devices' hardness [1][2][3][4][5][6][7][8][9][10][11] or serve as the basis for the fundamental modeling of the separate transistor [5,[12][13][14][15][16][17].…”