Simulation analysis of a high efficiency GaInP/Si multijunction solar cell

Abstract

The solar power conversion efficiency of a gallium indium phosphide (GaInP)/silicon (Si) tandem solar cell has been investigated by means of a physical device simulator considering both mechanically stacked and monolithic structures. In particular, to interconnect the bottom and top sub-cells of the monolithic tandem, a gallium arsenide (GaAs)-based tunnel-junction, i.e. GaAs(n+)/GaAs(p+), which assures a low electrical resistance and an optically low-loss connection, has been considered. The J–V characteristics of the single junction cells, monolithic tandem, and mechanically stacked structure have been calculated extracting the main photovoltaic parameters. An analysis of the tunnel-junction behaviour has been also developed. The mechanically stacked cell achieves an efficiency of 24.27% whereas the monolithic tandem reaches an efficiency of 31.11% under AM1.5 spectral conditions. External quantum efficiency simulations have evaluated the useful wavelength range. The results and discussion could be helpful in designing high efficiency monolithic multijunction GaInP/Si solar cells involving a thin GaAs(n+)/GaAs(p+) tunnel junction.

A Novel Method to Detect Partial Shadow Effects in Perovskite-Based Simulated Solar Cell System Faults

“…It also retains 80% of its original energy conversion ability even after 1000 h of continuous light. This solar cell is based on a recombinant layer of perovskite with a wide energy gap called Apex Flex, which is able to withstand heat, light and performance tests and simultaneously produce high and reliable voltage [27]. One of the main layers of a PSC is the electron transfer layer, which is responsible for moving electrons from the perovskite layer to the tin oxide-conducting glass with doped fluorine.…”

Design and optimisation of two-terminal InGaP/Si tandem solar cell through numerical simulation

“…In this study, numerical simulations were conducted to investigate the performance of an InGaP/Si DJSC with the aim to maximize efficiency of solar energy conversion. The proposed architecture of the basic tandem solar cell is fixed by relying on the outcome of previously works which have dealt with both experimental and numerical analysis aspects of such structure [21][22]. The published parameters in these works have been considered for calibrating the initial geometry and material properties of the solar cell model which constitutes the subject of optimization task.…”

“…Numerically based simulations are realized in the present work with the aim to improve an InGaP/Si solar cell reference structure which is selected based on recent experimental and theoretical studies [21][22]. Then, an optimization method is introduced.…”

Study and simulation of GaInP single junction solar cell

“…In 2012, the GaInP singlejunction solar cell manufactured by Dai et al [7] using Molecular Beam Epitaxy technique, has reached 16.6% efficiency. The GaInP single-junction solar cell with a band gap energy of 1.81 eV modeled by Geisz et al and Benaicha et al [8,9] has achieved a conversion efficiency of 20.8%. In 2014, P.P.…”