Simulation and analysis of the single event transient characteristics of SiGe HBT at low-temperature environment

Abstract

This study investigates the temperature dependence of single event transient (SET) effects in silicon germanium heterojunction bipolar transistors (SiGe HBTs). Using Silvaco TCAD simulations, we analyze the influence of linear energy transfer (LET), emitter bias voltage, and striking angle across a temperature range from 100 K to 300 K. The results reveal that temperature significantly affects emitter pulse current and charge collection induced by heavy ions. Higher temperatures increase charge collection, while lower temperatures correspond to higher emitter current and shorter pulse width. The study also observes an increase in bandgap energy (from 1.12 eV to 1.16 eV) and electrostatic potential (from 1.19 V to 1.25 V) with decreasing temperature. The study highlights the crucial role of temperature in SiGe HBT performance under radiation threats and emphasizes drift and diffusion mechanisms as dominant for charge collection.