Simulation and crystal growth of CdTe by axial vibration control technique in Bridgman configuration

Avetissov, Igor; Sukhanova, E.A.; Khomyakov, A. V.; Zinovjev, A.Yu.; Kostikov, Vladimir; Zharikov, E. V.

doi:10.1016/j.jcrysgro.2010.10.055

Cited by 15 publications

(7 citation statements)

References 13 publications

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“…The results of the CdSe experiments were quite different than those of the CdTe runs. Due to the higher melting temperature of CdSe (1239-1258 °C) (Cook, 1968;Sosovska, 2007) versus 1092 °C for CdTe (Avetissov et al, 2011) the process of producing larger CdSe crystals proved more difficult. The products for CdSe-1 and CdSe-2 made with and without a getter, respectively, yielded pure CdSe according to the P-XRD and EBSD analysis.…”

Section: Cdse Experimentsmentioning

confidence: 99%

“…The beneficial applications of CdSe include room temperature radiation detection (Burger et al, 1983), non-linear optical properties (Park et al, 1993), and photoluminescence (Qu and Peng, 2002). Since CdSe melts at 1239-1258 °C (Cook, 1968;Sosovska, 2007), a notably higher temperature than CdTe (1092 °C) (Avetissov et al, 2011), this higher melting temperature poses restrictions on the type of growth process that can be conducted based on furnace limitations, temperature limitations of fused quartz vessels, component volatilities, and other safety hazards. Thus, an approach utilizing flux-assisted growth for making CdSe is attractive.…”

Section: Introductionmentioning

confidence: 99%

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Flux-assisted CdTe and CdSe growth using an in-situ dynamic flux removal process

Riley

Henager

Matson

et al. 2018

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A flux-assisted in situ dynamic-flux-removal process for growing CdTe and CdSe using a getter metal is discussed. A metal getter (e.g., stainless steel, Pt, Cu, Ni, and Ag) was placed in the annulus outside of a glassy carbon crucible containing the CdTe+Te or CdSe+Se and this was sealed within an evacuated fused quartz ampoule. The excess Te and Se were added as fluxes. After melting, the flux and some Cd(Te,Se) was removed from the crucible through volatility and reacted with the metal getter forming metal tellurides. This process was conducted at temperatures below the melting temperatures of CdTe (Tm ~1041 °C) and CdSe (Tm ~1268 °C) and once the flux was removed, the CdTe or CdSe solidified into a solid polycrystalline ingot with several large grains. Following a 24-hr soak, different cooling rates were used including 0.1 °C min-1 , 1 °C min-1 , as well as furnace, air, and water quenching. The slowest quench rate (0.1 °C min-1) yielded the largest-grained crystals for the CdTe experiments. This process was then demonstrated in a gradient furnace using Cu and Ni getters to grow CdTe samples of ~100 g. The experiments conducted for CdSe were not as successful as for CdTe, yielding products of smaller grain sizes than were achieved with CdTe.

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Section: Cdse Experimentsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Flux-assisted CdTe and CdSe growth using an in-situ dynamic flux removal process

Riley

Henager

Matson

et al. 2018

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“…The efficacy of the AVC technique application for growth of both dielectric [18,19], and semiconductor crystals [20] has been demonstrated. The application of the AVC technique made it possible to both improve the structural perfection of the grown crystals and increase the volumetric growth rate in several times.…”

Section: Introductionmentioning

confidence: 99%

Axial Vibration Control Technique for Crystal Growth from the Melt: Analysis of Vibrational Flows’ Behavior

Nefedov,

Dovnarovich,

Kostikov

et al. 2024

Crystals

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A problem of efficacy of crystal growth methods for crystallization from solutions or melt has been investigated. The axial vibrational control (AVC) technique was considered as a perspective method to manage both heat-mass transfer and chemical component composition of the melts in the case of crystallization of complex chemical compounds. Numerical modeling and the search for generalized dependencies made it possible to predict the AVC parameters that provide optimal heat and mass transfer modes for creating flat liquid-solid interfaces, as well as the component composition of dissociated melts of various chemical compounds—Ge, NaNO3, CdTe.

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“…Stirring the melt by an axial vibration of the immersed baffle can suppresses these convective flows providing more homogeneous solute redistribution and promoting stable planar interface during the growth. This method is called axial vibrational control (AVC) and has been used in the growth of PbTe, CdTe, and NaNO 3 − crystals in the Cz and VB configurations. The AVC and AHP methods have been recently numerically analyzed for Ge, CdTe, and NaNO 3 .…”

Section: Introductionmentioning

confidence: 99%

Growing Single Crystals with a Low Melt Height and an Axial Vibration

Sheikhi

Yousefi

Balikci

2016

Crystal Growth & Design

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Single crystal growth of antimony-doped germanium is investigated by the vertical Bridgman (VB), axial heat processing (AHP), and axial vibrational control (AVC) methods. In the VB method, the existence of a radial temperature gradient in the melt leads to an inhomogeneous solute distribution which affects the quality of the grown crystal. However, in the AHP growth, the melt height above the interface and the radial temperature gradient in the melt can be reduced by immersing a baffle with a high thermal conductivity. Consequently, the radial solute segregation can be reduced. In order to provide even a better solute homogeneity, the immersed baffle can be vibrated axially which forms the AVC growth. Seven Sb-doped Ge crystals are grown with the three mentioned methods in order to investigate the effect of the melt height, the pulling velocity, and amplitude and frequency of the vibration on the homogeneity of the solute distribution, the achieved single crystal length, the morphological stability, and the quality of the grown crystals. It is observed that a reduced melt height and appropriately adjusted vibration in the melt can improve the crystal quality. The interface stability has been analyzed by several criteria.

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Simulation and crystal growth of CdTe by axial vibration control technique in Bridgman configuration

Cited by 15 publications

References 13 publications

Flux-assisted CdTe and CdSe growth using an in-situ dynamic flux removal process

Flux-assisted CdTe and CdSe growth using an in-situ dynamic flux removal process

Axial Vibration Control Technique for Crystal Growth from the Melt: Analysis of Vibrational Flows’ Behavior

Growing Single Crystals with a Low Melt Height and an Axial Vibration

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