Simulation and design of InGaAsN metal‐semiconductor‐metal photodetectors for long wavelength optical communications

Abstract

Optical properties of InGaAsN/AlGaAs metal‐semi‐conductor‐metal photodetectors (MSM‐PDs) with a modulation‐doped heterostructure operating at the wavelength of 1.3 μm have been simulated by a two‐dimensional device simulator. Simulation results show that the optimized device structure has a 30‐nm‐thick cap layer with Nd = 2×1017 cm–3, a 10‐nm‐thick spacer layer, and 7‐μm‐wide finger spacing to exhibit the largest photocurrent response and shortest decay response time. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

Status and Outlook of Metal–Inorganic Semiconductor–Metal Photodetectors

“…Since the first prototype was proposed half a century ago, MSM‐PDs based on traditional inorganic semiconductor materials, such as GaAs and Si, have been thoroughly investigated. [ 4,5,8,9 ] A great endeavor has been made to optimize the performances of MSM‐PDs based on GaAs and Si, which have been successfully industrialized and currently play a vital role in commercial information systems, such as optical fiber communication [ 10 ] and optical imaging sensors. [ 11 ] The continuous development in intelligent electronics, industrial control, biomedical instruments, visible light communication, tracking guidance, etc., triggered new demands on the photodetection performances, such as low cost, high speed, good flexibility, biocompatibility, solar‐blind, high operational temperature, and so on.…”