Simulation and Investigation of Electrothermal Effects in Heterojunction Bipolar Transistors

Gao, Xujiao; Hennigan, Gary L.; Musson, Lawrence; Huang, Andy; Negoita, Mihai

doi:10.1109/sispad.2019.8870358

Cited by 2 publications

(1 citation statement)

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“…V BE below 0.9 V, I B is mainly comprised of recombination current at emitter-base space charge region and it rises with annealing temperature for both devices. Therefore the increased base recombination current is due to degraded emitter-base junction after annealing and it causes β f decrease [21,22]. This effect is more pronounced on intrinsically-carbon-doped HBTs.…”

Section: Resultsmentioning

confidence: 99%

Burn-in effect in InGaP/GaAs HBT with intrinsically or extrinsically carbon doped base layer

et al. 2023

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InGaP/GaAs heterojunction bipolar transistors (HBTs) with intrinsically or extrinsically carbon doped base layers were grown by metal-organic chemical vapor deposition. Burn-in effect and the influence of thermal annealing at different temperatures on these devices were investigated. Results show that the intrinsically-carbon-doped HBTs demonstrate a higher current gain of 155 and a burn-in value of 24.0%, while the extrinsically-carbon-doped HBTs show a current gain of 92 and a burn-in value of 5.3%. Thermal annealing after exposing the base layer decreases the burn-in value from 24.0% to 5.7% and from 5.3% to 1.3% for intrinsically and extrinsically carbon doped HBTs, respectively, proved to be an effective method to eliminate the burn-in effect of HBT devices by hydrogen out diffusion. However, it also damages the base layer quality, leading to increased base recombination current and decreased current gain.

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Section: Resultsmentioning

confidence: 99%