Simulation and modelling of a high-performance trench capacitor for RF applications

Abstract

The necessity for exact modelling and simulation data of the electrical characteristics of passive on-chip devices has become more and more important. The electrical performance of RF circuits is predominantly restricted by the passives. In this work the RF simulation and characterization for a new trench capacitor in a low loss environment are presented for the first time. The excellent accordance of the modelling data with the measured RF characteristics of this so-called SilCap (silicon capacitor) is shown. An analytical model has been developed which permits the exact circuit simulation of all relevant electrical quantities. The device simulation enables the optimization of the SilCap device geometries.

CMOS 45‐nm 3D metal‐oxide‐metal capacitors for millimeter wave applications

“…The quality factor is extracted from measurement using the relation: where R 0 and C 0 are the series resistance and capacitance of the MOM capacitor. For a 215 fF MOM, the result presented Figure 7 gives 6.8 at 60 GHz, which is higher than those obtained with MIM capacitors [1, 2] but lower than those obtained with trench capacitors [3]. Nevertheless, the trench capacitors are not able to reach very high quality factor at very high frequencies.…”

“…Today three main integrated capacitors are used at radiofrequencies: the metal‐oxide‐metal (MOM) capacitor, the metal‐insulator‐metal (MIM) capacitors, and the 3D trench capacitors. The MOM capacitor does not need another process step like the MIM one [1, 2] or process modifications like the 3D trench capacitors [3]. Moreover, the performances of these three types of capacitor are well‐known at low frequencies [1–5] but never shown at millimeter‐wave frequencies.…”

“…The MOM capacitor does not need another process step like the MIM one [1, 2] or process modifications like the 3D trench capacitors [3]. Moreover, the performances of these three types of capacitor are well‐known at low frequencies [1–5] but never shown at millimeter‐wave frequencies. This article presents an innovative structure of integrated 3D MOM capacitors in a standard advanced CMOS process used for 60 GHz applications.…”

Integrated Silicon Microwave and Millimeterwave Passive Components and Functions

“…The obtained result gives a capacitance approximately 10 times higher than for planar MIM, but with a more complex process. An interesting structure is given by (Büyüktas et al, 2009) where they have design and realized trench capacitor in the front-end part (near active component). They have tested they capacitor up to 10 GHz.…”