Simulation-based EUV source and mask optimization

Abstract

Source and mask optimization has become a promising technique to push the limits of 193 nm immersion lithography. As the introduction of EUV lithography is at least delayed to the 22 nm technology node, sophisticated resolution enhancement techniques will already be required at a very early stage. Thus, pinpointing ideal mask layouts, mask materials, and illumination settings are as important aspects for EUV as for optical lithography. In this paper, we propose the application of global optimization techniques to identify appropriate process conditions for EUV lithography, using rigorous mask and imaging simulations

The Inverse Optimization of Lithographic Source and Mask via GA-APSO Hybrid Algorithm

“…GAs obtain the optimal solution by mimicking natural selection [11]. Tim Fühner et al [12][13][14][15] used a GA for SMO, and discussed the convergence behavior and different weight settings of criteria function. This method does not require any additional a priori knowledge about lithographic processes.…”