Simulation design of silicon based quantum well nanolaser based on surface plasmon polariton

Abstract

We propose a silicon based quantum well nanolaser structure based on surface plasmon polariton (SPP). The InGaAs/InP multi-quantum well in this structure can be obtained by direct epitaxy growth in nanoscale V-grooved trenches on silicon substrate by the high aspect ratio trapping method; and through the deposition of the metal layer and dielectric layer to excite the property of the SPP. The finite element method is used to simulate the electric field distribution of the laser mode and the variation of the mode characteristics, waveguide characteristics and threshold characteristic of the optical communication band with the geometric parameters. The results show that this structure has a better ability to limit the optical field and can realize deep sub-wavelength constraint of the output optical field at a lower threshold level, which is an expected idea of the high-performance and miniaturized silicon-based nanolaser.

Low Threshold and Long‐Range Propagation Plasmonic Nanolaser Enhanced by Black Phosphorus Nanosheets

“…Therefore, an important parameter, FOM was employed to evaluate the integrated performance based on the hybrid waveguide. Generally, the higher the parameter FOM, the better the integrated performance based on hybrid waveguide, which can be expressed as [ 44 ] …”