2006
DOI: 10.1088/0022-3727/39/8/026
|View full text |Cite
|
Sign up to set email alerts
|

Simulation for deposition of cadmium telluride thin films in hot wall epitaxial system using Monte Carlo technique

Abstract: The molecular flow in the hot wall epitaxial system has been studied by computer simulation using the Monte Carlo technique for the deposition of CdTe thin films. The number of wall collisions, intermolecular collisions, direct transmissions, number of molecules and flux density distributions along each volume of the tube, with different source temperatures and wall temperatures for various lengths and radii of the hot wall setup, have been simulated, then the optimal deposition conditions for the thermodynami… Show more

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
1
1
1

Citation Types

0
3
0

Year Published

2008
2008
2016
2016

Publication Types

Select...
3
1

Relationship

0
4

Authors

Journals

citations
Cited by 4 publications
(3 citation statements)
references
References 39 publications
0
3
0
Order By: Relevance
“…The darkness increases with increase in thickness of the thin films. Figure 2 110), ( 111), ( 200), ( 210) and (211) reflections of the rock salt structure [5,[12][13][14][15][16][17][18][19][20][21].…”
Section: Resultsmentioning
confidence: 99%
See 1 more Smart Citation
“…The darkness increases with increase in thickness of the thin films. Figure 2 110), ( 111), ( 200), ( 210) and (211) reflections of the rock salt structure [5,[12][13][14][15][16][17][18][19][20][21].…”
Section: Resultsmentioning
confidence: 99%
“…The computer simulation for the deposition of CdSnTe thin films in the hot wall epitaxial system is carried out using a computer with the help of the MATLAB software [11]. The total number of intermolecular collisions, wall collisions and total number of molecules passing out through the exit plane directly from the entrance plane, the number density distribution along each volume section, energy of the molecule and flux density distributions at the exit plane are calculated with different source temperatures (673 -873 K), wall temperatures (623 -823 K) and design parameters (L/r) from 2 to 24 [10,12]. The source and wall temperatures are optimized as 780 K and 760 K (for CdTe), 720 K and 700 K (for Cd 0.…”
Section: Methodsmentioning
confidence: 99%
“…The hot wall system is concerned with the fabrication of thin films under conditions close to thermodynamic equilibrium with minimum loss of material [2]. Hgi-xCdxTe, ZnxCdi-xTe and CdxSni.xTe alloys have the unique feature of having direct band gap, tunable from the visible to the far infra red by adjusting the 'x' composition of the alloy.…”
Section: Introductionmentioning
confidence: 99%