Simulation of a thin-film solar cell based in kesterite using Matlab

Bernal-Condia, A; Sánchez-Cely, J A; Bastidas‐Rodríguez, Juan David; Londoño, Mónica Andrea Botero; Mantilla, María A.

doi:10.1088/1742-6596/1159/1/012020

Cited by 5 publications

(5 citation statements)

References 9 publications

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“…Area of the cell is taken 0.410 cm 2 , thickness of buffer layer is varied from 0.5um to 4um; thickness of active layer is 4um. The simulation also requires fixing of material parameters of the solar cell listed in the table1 [3]. Absorption is evaluated for the wavelength from 350nm to 700um the average value is obtained α = 4.2 × 10 4 cm -1 eV 1/2 .…”

Section: Resultsmentioning

confidence: 99%

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Effect of Buffer Layer on Cu (In, Ga)Se2 Solar Cell Performance

Kumar¹,

Arora²

2021

SKIT Research Journal

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Search of sustainable energy resources is continued from the decades. The industrialization growth in various domains and socio-economic developments created huge demand of electrical power while the conventional resources are shrinking. This opens doors for research and developments in renewable energy resources such as, Solar, Wind, Hydro and Geothermal Energy sectors. Among these energy solar energy emerged as one of the sustainable energy resource. This research work targeted to improve the efficiency of thin film flexible Copper Indium Gallium Di-Selenide abbreviated as CIGS cell through optimization of buffer layer parameters. The proposed model used zinc sulphide (ZnS) as a potential buffer layer to make the solar cell free from toxic Cadmium (CdS) sulphide. Further the doping profile and width of buffer layers are investigated along with corresponding change in energy states and electrical permittivity of the material. The complete solar cell model is simulated using MATLAB scripting and SCAPS model. the results are compared with the existing result of CdS-CIGS. The ZnS-CIGS model is simulated with variation in thickness of buffer layer and optimized material parameters are determined.

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Section: Resultsmentioning

confidence: 99%

“…The absorption co-efficient is modeled with excitation of electrons from VB to CB considering temperature constant. The transition is approximated for direct band gap materials and so absorption co-efficient determined by [3]…”

Section: Modeling Of Solar Cellmentioning

confidence: 99%

Effect of Buffer Layer on Cu (In, Ga)Se2 Solar Cell Performance

Kumar¹,

Arora²

2021

SKIT Research Journal

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“…Introduction uch research has been done in the field of third generation thin film solar cells, such as Cu (In, Ga) Se2 (CIGS) and cadmium telluride (CdTe). The reason for the popularity of these types of cells is their cost-effectiveness because in their production, less material is consumed compared to ordinary monocrystalline cells [1,2]. CdTe technology is about 30% cheaper than CIGS technology and about 40% cheaper than a-Si technology [3].…”

Section: Extended Abstractmentioning

confidence: 99%

“…It containing the current voltage diagram (J -V), that various parameters such as power conversion efficiency (PCE), short circuit current density (Jsc), open circuit voltage (Voc), fill factor (FF%) are extracted at various temperatures. Also quantum efficiency (QE%), capacitance frequency spectroscopy C(f), capacitance +voltage spectroscopy C(V), generation and recombination profiles, carriercurrent densities, band diagrams that describe correctly the energy bands EC and EV at the interface between the layers, etc [1,2]. Figure 1 shows the structure plan and Schematic of band diagram of the FTO/TiO2/n-CdSe/ p-CdSexTe1_x/ p-CdTe /Pt thin film solar cell.…”

Section: Numerical Modelingmentioning

confidence: 99%

Design and numerical modeling of CdTe nanostructured thin film solar cell and the effect of CdSeXTe1-X intermediate layer on the efficiency enhancement by SCAPS-1D software

souri¹,

Marandi²

2023

MASM

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In this study, we combined the experimental work performed using a one-dimensional simulation program to simulate the capacity of a solar cell. Simulation can be used to show the real effects of a phenomenon on the target subject, under controlled and regulated conditions. In this here, CdTe based thin film solar cell has been investigated under AM 1.5 ghobal spectrum with using Solar Cell Capacitance Simulator-1D (SCAPS-1D) software. Initially, solar cells with nanostructured FTO/TiO2/n-CdSe/p-CdTe were considered as the elementary cells and FTO/ TiO2/n-CdSe/p-CdSe1_xTex/p-CdTe as the upgraded cells. The purpose of this study was to investigate the key role of layer CdSe xTe 1-x. The results of the analyzes showed that the presence of CdSe xTe1-x nanostructured layer, between p-type CdTe absorber layer and n-type CdSe layer increased PCE from 14.05% to 21.98%, JSC from 20.42. mA/ cm2 to 26.06 mA/cm2, FF from 54.73% to 57.69% and VOC from 1.25 V to 1.46 V compared to the elementary cell.

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“…Thin‐film solar cells (TFSCs) have been considered as promising candidates because of some potential facilities such as lower wastage of materials, fewer processing steps, wide variations on device designing, lower cost production, and impressive progress on stability and overall performances. [ 1–5 ] These incorporate some photovoltaic (PV) modules such as cadmium telluride, gallium arsenide, hydrogenated amorphous silicon, copper zinc tin sulfide (CZTS), etc., which all are specially used as emerging semiconducting absorber materials and are dominant in PV technology due to various privileges including high efficiency, low cost, flexibility, light weight, abundance of used materials, nontoxicity, and compatibility with fabrication processes. [ 6–9 ]…”

Section: Introductionmentioning

confidence: 99%

Modeling and Performance Analysis of Highly Efficient Copper Indium Gallium Selenide Solar Cell with Cu₂O Hole Transport Layer Using Solar Cell Capacitance Simulator in One Dimension

Sultana

Islam

Ahmed

2021

Physica Status Solidi (a)

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Herein, the widely available and cheapest cuprous oxide (Cu2O) as hole transport layer (HTL) is proposed to improve the performance of thin‐film copper indium gallium selenide (CIGS) solar cell. Solar Cell Capacitance Simulator in One Dimension (SCAPS‐1D) is utilized to design and study output characteristics of the modeled photovoltaic (PV) cell. A comparison between the proposed cell with Cu2O HTL and the reference CIGS solar cell is presented. The PV performances of CIGS solar cells are analyzed by changing thickness, carrier density and defects of different layers, operating temperatures, and recombination velocity at back contact. Optimal thicknesses of Cu2O HTL, CIGS absorber, cadmium sulfide (CdS) buffer, and the fluorine‐doped tin oxide (FTO) window layer are obtained to be 0.3, 0.8, 0.05, and 0.05 μm, respectively. Efficiency of 30.30% is achieved for the proposed CIGS PV device with Cu2O HTL. The simulated results imply that the proposed Cu2O as HTL can be used to show proficient and cost‐effective thin‐film CIGS PV cells.

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Simulation of a thin-film solar cell based in kesterite using Matlab

Cited by 5 publications

References 9 publications

Effect of Buffer Layer on Cu (In, Ga)Se2 Solar Cell Performance

Effect of Buffer Layer on Cu (In, Ga)Se2 Solar Cell Performance

Design and numerical modeling of CdTe nanostructured thin film solar cell and the effect of CdSeXTe1-X intermediate layer on the efficiency enhancement by SCAPS-1D software

Modeling and Performance Analysis of Highly Efficient Copper Indium Gallium Selenide Solar Cell with Cu₂O Hole Transport Layer Using Solar Cell Capacitance Simulator in One Dimension

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Simulation of a thin-film solar cell based in kesterite using Matlab

Cited by 5 publications

References 9 publications

Effect of Buffer Layer on Cu (In, Ga)Se2 Solar Cell Performance

Effect of Buffer Layer on Cu (In, Ga)Se2 Solar Cell Performance

Design and numerical modeling of CdTe nanostructured thin film solar cell and the effect of CdSeXTe1-X intermediate layer on the efficiency enhancement by SCAPS-1D software

Modeling and Performance Analysis of Highly Efficient Copper Indium Gallium Selenide Solar Cell with Cu2O Hole Transport Layer Using Solar Cell Capacitance Simulator in One Dimension

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Product

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About

Modeling and Performance Analysis of Highly Efficient Copper Indium Gallium Selenide Solar Cell with Cu₂O Hole Transport Layer Using Solar Cell Capacitance Simulator in One Dimension