2014
DOI: 10.7567/jjap.54.01ac04
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Simulation of balanced power feeding plasma surrounded by a metal box

Abstract: The characteristics of a balanced power feeding VHF plasma was examined by two-dimensional simulation in which a pair of parallel disc discharge electrodes was surrounded by a metal box. The simulation results indicated that charged particles were generated between the discharge electrodes and diffused outside the electrodes. It was found that the discharge outside the electrodes was suppressed by shortening the distance between the electrode and the metal box, and that the discharge state between the electrod… Show more

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Cited by 1 publication
(2 citation statements)
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“…4(a), T e is uniform (∼2 eV) except around the discharge electrodes (T e = 5.5 eV), which is a typical characteristic of the CCP. [21][22][23][24] Figure 4(b) exhibits that V s is uniform between the discharge electrodes and an ambipolar field is formed outside them. Note that T e = 1.8 eV and V s = 34.2 V at y = 15 mm (near the substrate).…”
Section: Resultsmentioning
confidence: 99%
See 1 more Smart Citation
“…4(a), T e is uniform (∼2 eV) except around the discharge electrodes (T e = 5.5 eV), which is a typical characteristic of the CCP. [21][22][23][24] Figure 4(b) exhibits that V s is uniform between the discharge electrodes and an ambipolar field is formed outside them. Note that T e = 1.8 eV and V s = 34.2 V at y = 15 mm (near the substrate).…”
Section: Resultsmentioning
confidence: 99%
“…To contribute to the development of the triode plasma source that provides high deposition rates, we have performed two-dimensional simulations of a triode VHF SiH 4 plasma using multirod electrodes 19) with the plasma hybrid code of the PEGASUS software. [20][21][22][23][24] There have been many reports on simulations of SiH 4 plasmas. [25][26][27][28][29][30][31] As is well known, the main deposition precursor in SiH 4 plasmas is SiH 3 and the contribution of SiH 2 is much smaller than that of SiH 3 , and SiH 2 affects the quality of the deposited films 25) and is called the precursor to form higher-order silanes.…”
Section: Introductionmentioning
confidence: 99%