Abstract:High-Speed silicon modulators, based on carrier dependent absorption effects, have recently been reported in the literature [1]. For improved performance, these modulators rely on a MOS configuration to control carrier accumulation, rather than on carrier injection from the contacts, to induce an index perturbation for controlling the phase of a propagating signal. Accurate simulation of the carrier distribution is required for the analysis of such a device. This entails the self-consistent solution of the cou… Show more
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