Simulation of CdS/p-Si/p+-Si and ZnO/CdS/p-Si/p+-Si heterojunction solar cells

Improving Solar Cell Efficiency through Controlled Annealing Effects of TiO2 Thin Films

“…, d 1 is thin-film thickness, n 1 is thin-film refractive index, n 0 is the air refractive index, n 2 is substrate refractive index, and θ is light incidence angle. [24][25][26] Figure 3 illustrates the relationship between annealing temperature and carrier density, as well as resistivity values obtained from Hall measurements. According to Figure 3a, the carrier density obtained at 300 °C was 4.982 Â 10 14 cm À3 and increasing the annealing temperature to 500 °C resulted in an increase in the carrier density to 1.256 Â 10 15 cm À3 .…”

“…= \frac{r_{1}^{2} + r_{2}^{2} + 2 r_{1} r_{2} \text{cos} 2 \theta}{1 + r_{1}^{2} r_{2}^{2} + 2 r_{1} r_{2} \text{cos} 2 \theta}$$where , , , d 1 is thin‐film thickness, n 1 is thin‐film refractive index, n 0 is the air refractive index, n 2 is substrate refractive index, and θ is light incidence angle. [ 24–26 ] Figure illustrates the relationship between annealing temperature and carrier density, as well as resistivity values obtained from Hall measurements. According to Figure 3a, the carrier density obtained at 300 °C was 4.982 × 10 14 cm −3 and increasing the annealing temperature to 500 °C resulted in an increase in the carrier density to 1.256 × 10 15 cm −3 .…”