2000
DOI: 10.1016/s0168-9002(99)01229-2
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Simulation of CdZnTe gamma-ray spectrometer response

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Cited by 16 publications
(5 citation statements)
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“…However, little work has been done when the effect of strong magnetic field (>3T) needs to be considered. In this study, we conducted the simulation of CZT detector response inside a 3T magnetic field based on the models described in [8]. This model takes into account the physical properties of CZT detectors such as carrier mobility and lifetime and also the applied weighting electric field.…”
Section: Spect Subsystem Modelling and Simulationmentioning
confidence: 99%
“…However, little work has been done when the effect of strong magnetic field (>3T) needs to be considered. In this study, we conducted the simulation of CZT detector response inside a 3T magnetic field based on the models described in [8]. This model takes into account the physical properties of CZT detectors such as carrier mobility and lifetime and also the applied weighting electric field.…”
Section: Spect Subsystem Modelling and Simulationmentioning
confidence: 99%
“…Prettyman (1999) implemented the numerical solution of the adjoint electron/hole continuity and Poisson equations to produce a 2D charge induction efficiency (CIE) map to compute the pulse-height spectrum. Finally, Picone et al (2003) used the adjoint equation concept to extend the planar model initially described in Glière et al (2000), to present an accurate method for determining the 3D distribution of charge pulses produced in a semiconductor incorporating models of electronic signal processing and electronic noise. These methods provide an accurate estimation of the induced charge and pulse shape but suffer from a high computational cost as a result of the need for numerically solving several differential equations.…”
Section: Introductionmentioning
confidence: 99%
“…A number of publications (Hamel and Paquet 1996, Glière et al 2000, Heanue et al 1997, Mathy et al 2004 have in the past dealt with the modelling of charge transport in semiconductor detectors. Early works assumed a uniform electric field, while later works tended to consider more complicated electric field profiles, where numerical techniques become inevitable.…”
Section: Introductionmentioning
confidence: 99%