Simulation of channelled ion ranges in crystalline silicon

The simulation of implantation of heavy charged particles in a crystalline material

“…In order to find the channeled stopping powers, we had found random stopping powers by using formula of Montenegro et al MCV in a pervious work [5]. However, the stopping powers obtained by these methods may differ up to 30% in some cases.…”

“…In analytical approach, ion ranges can be found by solving ordinary differential equations of which derived from transport theory. Kabadayi and Gumus [5] are calculated ion ranges for various ion target combinations by using reduced first order transport theory derived equations. By using the equation for the ion range, the range can be found by solving following equation,…”

“…After finding randomly chosen impact parameter for an ion, the respective scattering region on channel area determined to find corresponding stopping powers then proceeded to calculate range. Further details of this partition approach can be found Kabadayi and Gumus [5].…”

“…Theoretical treatment of Lindhard [4] showed that the channeled particles traveling in the domain of low charge density only suffer a fraction of the normal energy loss in crystalline material and thus penetrates deeper into target. We introduced a new model to treat this phenomenon in a pervious work [5] for the simulation of ion implantation into one of the crystalline direction of silicon target.…”