A Gaussian model for the far‐field intensity pattern (FFIP) of semiconductor laser diodes is proposed based on a curve‐fitting technique. The analysis is carried out for different values of relative refractive index difference Δ and active layer thickness d ranging from 3% to 10% and 0.1 to 0.3 μm, respectively. The model is sufficiently accurate to be used in analyzing the coupling efficiency between laser diodes and single‐mode fibers.