Simulation of dark current characteristics of type-II InAs/GaSb superlattice mid-wavelength infrared p–i–n photodetector

Thi, Yen Le; Kamakura, Yoshinari; Mori, Nobuya

doi:10.7567/1347-4065/ab03ca

Cited by 13 publications

(13 citation statements)

References 24 publications

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“…Here, H IF is added at each interface by the delta interface strength potentials i.e H BA XY = 490meV and H AB XY = 870meV , respectively denoting the InSb (GaSbon-InAs) and GaAs (InAs-on-GaSb) like strength potentials at the interface [16,17,30,31]. For MSL, the GaSb layer is treated as unstrained and the other layers i.e InAs and AlSb as strained to attain the GaSb lattice constant [30].…”

Section: A Kp Methodsmentioning

confidence: 99%

Comprehensive quantum transport analysis of M-Superlattice structures for barrier infrared detectors

Singh,

Mukherjee,

Muralidharan

2021

Preprint

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In pursuit of designing superior type-II superlattice barrier infrared detectors, this study encompasses an exhaustive analysis of utilizing M-structured superlattices for both the absorber and barrier layers through proper band engineering and discusses its potential benefits over other candidates. The electronic band properties of ideally infinite M-structures are calculated using the eight band k.p method which takes into account the effects of both strain and microscopic interface asymmetry to primarily estimate the bandgap and density-of-states effective mass and their variation with respect to the thicknesses of the constituent material layers. In contrast, for practical finite-period structures, the local density-of-states and spectral tunneling transmission and current calculated using the Keldysh non-equilibrium Green's function approach with the inclusion of non-coherent scattering processes offer deep insights into the qualitative aspects of miniband and localization engineering via structural variation. Our key results demonstrate how to achieve a wide infrared spectral range, reduce tunneling dark currents, induce strong interband wavefunction overlaps at the interfaces for adequate absorption, and excellent band-tunability to facilitate unipolar or bipolar current blocking barriers. This study, therefore, perfectly exemplifies the utilization of 6.1 Å material library to its full potential through the demonstration of band engineering in M-structured superlattices and sets up the right platform to possibly replace other complex superlattice systems for targeted applications.

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Section: A Kp Methodsmentioning

confidence: 99%

Comprehensive quantum transport analysis of M-Superlattice structures for barrier infrared detectors

Singh,

Mukherjee,

Muralidharan

2021

Preprint

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“…The dark current of photovoltaic IR detectors mainly includes diffusion current (J diff ), G-R current (J G-R ), band-to-band current (J bbt ), and trap-assisted tunneling current (J tat ). 32) In terms of dark current components, diffusion current, and G-R current are mainly considered for narrow band gap semiconductors. 33)…”

Section: Analysis Of Physical Modelmentioning

confidence: 99%

Design of uncooled mid-wave infrared detectors based on lead selenide barrier structure

Su,

Liu,

et al. 2023

Jpn. J. Appl. Phys.

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Mid- and long-wavelength infrared (IR) photodetectors incorporating narrow-bandgap semiconductors often face the challenge of large room-temperature dark current, limiting their applications in military and civilian. Herein, a novel pBn+ barrier detector architecture based on lead selenide/indium selenide barrier structure is proposed to significantly suppress the dark current, so that uncooled mid-wave IR (MWIR) photodetectors with high performance can be achieved. The finite element analysis of the detector demonstrates reduced room-temperature dark current down to 55 mA/cm2 under -0.1 V bias, which is a two-fold decrease compared to InAs/InAsAb type-II superlattice detector. In addition, at room temperature, the optimized pBn+ barrier detector exhibits excellent responsivity and detectivity of 1.23 A/W and 9.47×109 cm·Hz1/2·W-1 at 3.8 μm, respectively. The PbSe-based barrier architecture provides a promising industrialization solution for high-performance uncooled MWIR photodetectors.

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“…Modeling state-of-the-art infrared (IR) photodetectors [1][2][3][4][5][6] require highly accurate transport parameters for developing dark and photocurrent performance projections [5,[7][8][9][10]. Current technologically relevant IR photodetectors use III-V materials such as InAs/GaSb [11,12] due to numerous advantages [13,14].…”

Section: Introductionmentioning

confidence: 99%

Advancing carrier transport models for InAs/GaSb type-II superlattice MWIR photodetectors

Kumar¹,

Mandia²,

Singh³

et al. 2023

Preprint

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In order to provide the best possible performance, modern infrared photodetector designs necessitate extremely precise modeling of the superlattice absorber region. We advance the Rode's method for the Boltzmann transport equation in conjunction with the k.p band structure and the envelope function approximation for a detailed computation of the carrier mobility and conductivity of layered type-II superlattice structures, using which, we unravel two crucial insights. First, the significance of both elastic and inelastic scattering mechanisms, particularly the influence of the interface roughness and polar optical phonon scattering mechanisms in technologically relevant superlattice structures. Second, that the structure-specific Hall mobility and Hall scattering factor reveals that temperature and carrier concentrations significantly affect the Hall scattering factor, which deviates significantly from unity even for small magnetic fields. This reinforces the caution that should be exercised when employing the Hall scattering factor in experimental estimations of drift mobilities and carrier concentrations. Our research hence offers a comprehensive microscopic understanding of carrier dynamics in such technologically relevant superlattices. Our models also provide highly accurate and precise transport parameters beyond the relaxation time approximation and thereby paving the way to develop physics-based device modules for mid-wavelength infrared photodetectors.

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Simulation of dark current characteristics of type-II InAs/GaSb superlattice mid-wavelength infrared p–i–n photodetector

Cited by 13 publications

References 24 publications

Comprehensive quantum transport analysis of M-Superlattice structures for barrier infrared detectors

Comprehensive quantum transport analysis of M-Superlattice structures for barrier infrared detectors

Design of uncooled mid-wave infrared detectors based on lead selenide barrier structure

Advancing carrier transport models for InAs/GaSb type-II superlattice MWIR photodetectors

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