Simulation of Effects of Defects and Layers Thickness on the Performance of CIGS Solar Cells

Khadir, A.

doi:10.12693/aphyspola.137.1128

Cited by 17 publications

(8 citation statements)

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“…The Shockley-Read-Hall recombination rate increases with an increase in absorber layer defect density, which traps photogenerated carriers and causes a reduction in their number by decreasing their lifetime. As a result, V oc , J sc , FF, and efficiency decrease [64,65]. Too low absorber defect density is impossible to achieve in practical cases [66].…”

Section: Impact Of Cmts Absorber Layer Defect Densitymentioning

confidence: 99%

SCAPS Modeling of CMTS Solar Cell with ZrS₂ Buffer Layer

Chowdhury

2024

Acta Phys. Pol. A

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The aim of this work is to study the photovoltaic performance of CMTS-based solar cell using solar cell capacitance simulator-1D. The use of ZrS2 as a buffer layer for CMTS-based solar cell is the novelty of this work. The impact of several parameters such as thickness, defect density, electron affinity, and doping concentration on the cell performances is investigated to improve cell performance. It is observed that these parameters impact significantly the solar cell performance. The optimized solar cell obtained an efficiency of 31.54% with an open-circuit voltage of 0.99 V, short-circuit current density of 36.44 mA/cm 2 , and fill factor of 87.69%. The results suggest guidelines for developing low-cost and highly efficient CMTS thin-film solar cells.

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Section: Impact Of Cmts Absorber Layer Defect Densitymentioning

confidence: 99%

SCAPS Modeling of CMTS Solar Cell with ZrS₂ Buffer Layer

Chowdhury

2024

Acta Phys. Pol. A

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“…The doping density (N A ) in CIGSe, as one variable parameter, was changed in the range of 10 15 -10 16 cm À3 , according to the ranges found in the literature. [3,7,25,33] Additionally, defect densities (N def ) are of interest, which significantly impacted the cell performance. An acceptor defect density (N def(A) ), with a half Gaussian distribution from the back contact, was considered for the absorber in the range of 7 Â 10 10 to 1.15 [4] 1.45 [25] 2.4 [30] 3.4 [30] 3.5 [29] Electron affinity χ [eV] 4.3 [3] 4.3 4.…”

Section: Electrical Simulationsmentioning

confidence: 99%

“…Typical density values for defects range from 10 13 to 10 18 cm À3 depending on the material. [3][4][5]7] Furthermore, the acceptor-type interface state density (D i ) was varied from 10 10 to 10 14 cm À2 due to 10 15 cm À2 being the maximum density of dangling bonds in Mo as a body-centered cubic crystal. [34] In addition, the work function of the back contact (φ m ) ranged from 4.6 to 4.95 eV.…”

Section: Electrical Simulationsmentioning

confidence: 99%

“…It was used here to develop a base parameter set capable of modeling ultrathin CIGSe solar cells on Mo or ITO back contact. There are multiple research works showing numerical simulation on the effect of layer thickness, [ 7 ] the rear surface passivation mechanism, [ 4 ] Al 2 O 3 ‐rear‐passivated, [ 8 ] and interdigitated back contacted absorbers. [ 5 ] Recently, an updated baseline model for 1D modeling of thin film and ultrathin absorbers in SCAPS has been proposed.…”

Section: Introductionmentioning

confidence: 99%

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Realistic Multidimensional Optoelectrical Modeling Guide for Copper Indium Gallium Diselenide Solar Cells

2022

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Herein, an optoelectrical model is presented for copper indium gallium diselenide (CIGSe) solar cells in COMSOL Multiphysics, capable of multidimensional simulations, and it is applied to ultrathin (500 nm absorber thickness) solar cells. First, the modeling approach is shown. Special attention is paid to back contact materials, interface states, and defect application and their impact on the current–voltage (J–V) characteristics. To address whether the back contact is Schottky or Ohmic, the influence of the Schottky barrier height, recombination velocity, and interface states is shown. Then, the additional application of an acceptor defect gradient at the absorber back and a donor defect density distribution at the p–n junction is investigated. The results of these parameter adjustments are discussed, and the trends are shown to enable fast fitting of experimental J–V curves. Finally, the results are compared to the experimental J–V curves for indium tin oxide and Mo back contact, and challenges encountered are discussed while fitting. The optoelectrical model for CIGSe solar cells, established in two dimensions here, paves the way for comprehensively describing 2D and 3D solar cell structures, e.g., nanotextured or microsolar cells, as well as for considering different absorber thicknesses.

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“…A PV cell uses photovoltaic effect to convert the solar energy into electric current. Sustainability, renewability and cleanness are the features that cause solar energy conversion achieve a large attention globally in recent years [4]. Low-cost, high-efficient and developed deposition techniques are the various advantages that makes semiconducting absorber materials based thin-film solar cells potential candidates for photovoltaic device applications [5][6][7][8][9][10].…”

Section: Introductionmentioning

confidence: 99%

SCAPS numerical design of MoSe2 solar cell for different buffer layers

Chowdhury,

Arif,

Israq

et al. 2024

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The solar cell capacitance simulator (SCAPS-1D) has been used to simulate, design and analyze of MoSe2, an attractive transition metal dichalcogenide (TMDC) material, based heterojunction solar cells to use it as a potential alternative to conventional absorber layers used in solar cells. The work also focuses on finding optimal absorber, buffer layer thickness and impact of operating temperature on solar cell performance with a possible replacement to toxic CdS buffer layer. It has been obtained that the optimum thickness of MoSe2 absorber layer is 1 µm and buffer layer is about 0.04 µm. The efficiency obtained with CdS based buffer layer solar cell is 20.21%. Among different buffer layers such as In2S3, ZnO, ZnOS and ZnSe, the highest efficiency obtained of MoSe2 based solar cell is 20.58% with ZnO buffer layer. ZnO buffer based solar cell shows a temperature gradient of -0.355%/K compared to -0.347%/K for CdS buffer based solar cell. The findings of this work provide important guidance to fabricate high-efficiency MoSe2 thin film solar cell with non-toxic ZnO as a potential buffer layer.

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Simulation of Effects of Defects and Layers Thickness on the Performance of CIGS Solar Cells

Cited by 17 publications

References 0 publications

SCAPS Modeling of CMTS Solar Cell with ZrS₂ Buffer Layer

SCAPS Modeling of CMTS Solar Cell with ZrS₂ Buffer Layer

Realistic Multidimensional Optoelectrical Modeling Guide for Copper Indium Gallium Diselenide Solar Cells

SCAPS numerical design of MoSe2 solar cell for different buffer layers

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Simulation of Effects of Defects and Layers Thickness on the Performance of CIGS Solar Cells

Cited by 17 publications

References 0 publications

SCAPS Modeling of CMTS Solar Cell with ZrS2 Buffer Layer

SCAPS Modeling of CMTS Solar Cell with ZrS2 Buffer Layer

Realistic Multidimensional Optoelectrical Modeling Guide for Copper Indium Gallium Diselenide Solar Cells

SCAPS numerical design of MoSe2 solar cell for different buffer layers

Contact Info

Product

Resources

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SCAPS Modeling of CMTS Solar Cell with ZrS₂ Buffer Layer

SCAPS Modeling of CMTS Solar Cell with ZrS₂ Buffer Layer