Simulation of electronic/ionic mixed conduction in solid ionic memory devices

Kwon, Hyuck In

doi:10.1016/j.mejo.2006.04.009

Cited by 4 publications

(3 citation statements)

References 11 publications

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“…Previous research on the modeling of mixed ionic/electronic conductors focused on their stationary or/and static i – v characteristics 4–7. The results of dynamic simulations of a system with Schottky‐type contacts have been discussed,8 but details of the simulation approach have not yet been published.…”

Section: Introductionmentioning

confidence: 99%

Coupled Ionic and Electronic Transport Model of Thin‐Film Semiconductor Memristive Behavior

Strukov

Borghetti

Williams

2009

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The memristor, the fourth passive circuit element, was predicted theoretically nearly 40 years ago, but we just recently demonstrated both an intentional material system and an analytical model that exhibited the properties of such a device. Here we provide a more physical model based on numerical solutions of coupled drift-diffusion equations for electrons and ions with appropriate boundary conditions. We simulate the dynamics of a two-terminal memristive device based on a semiconductor thin film with mobile dopants that are partially compensated by a small amount of immobile acceptors. We examine the mobile ion distributions, zero-bias potentials, and current-voltage characteristics of the model for both steady-state bias conditions and for dynamical switching to obtain physical insight into the transport processes responsible for memristive behavior in semiconductor films.

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Section: Introductionmentioning

confidence: 99%

Coupled Ionic and Electronic Transport Model of Thin‐Film Semiconductor Memristive Behavior

Strukov

Borghetti

Williams

2009

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177

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“…The doping is metallurgical, and as such determined during the fabrication process. , Normally, the motion of impurities in an operating semiconductor device is undesirable, unless purposely designed, as in Li:Si devices . However, the coupled motion of charged dopants and carriers in an externally applied electric field within a semiconductor − has been demonstrated to be a viable mechanism for a memristor. − …”

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confidence: 99%

Continuous Electrical Tuning of the Chemical Composition of TaO_x-Based Memristors

et al. 2012

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TaO(x)-based memristors have recently demonstrated both subnanosecond resistance switching speeds and very high write/erase switching endurance. Here we show that the physical state variable that enables these properties is the oxygen concentration in a conduction channel, based on the measurement of the thermal coefficient of resistance of different TaO(x) memristor states and a set of reference Ta-O films of known composition. The continuous electrical tunability of the oxygen concentration in the channel, with a resolution of a few percent, was demonstrated by controlling the write currents with a one transistor-one memristor (1T1M) circuit. This study demonstrates that solid-state chemical kinetics is important for the determination of the electrical characteristics of this relatively new class of device.

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“…In fully-blocking boundary conditions, either the ionic or electronic specie is blocked from passing through an interface. However, none of these conditions are seen in practical applications that involves electrode reactions [11,12].…”

Section: Introductionmentioning

confidence: 99%

Modeling of charge-mass transport in solid electrolyte-based electrochemical nanomanufacturing process

Hsu

Fang

Panikkar

et al. 2015

Journal of Manufacturing Processes

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a b s t r a c tA numerical model was developed to capture the charge-mass transport in electrochemical nanomanufacturing processes based on mixed-conducting solid electrolyte material systems. This model was verified by the matching of numerical predictions and experimental measurements of process parameters. The model was also used to predict parameters affecting ionic current flow, and to study the temporal and spatial transport properties of solid electrolyte silver sulfide during an electrode dissolution process. Conditions in which phase separation could occur in silver sulfide were found. Enhanced transport properties due to confinement in lateral dimensions were also observed through the developed model.Published by Elsevier Ltd. on behalf of The Society of Manufacturing Engineers.

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Simulation of electronic/ionic mixed conduction in solid ionic memory devices

Cited by 4 publications

References 11 publications

Coupled Ionic and Electronic Transport Model of Thin‐Film Semiconductor Memristive Behavior

Coupled Ionic and Electronic Transport Model of Thin‐Film Semiconductor Memristive Behavior

Continuous Electrical Tuning of the Chemical Composition of TaO_x-Based Memristors

Modeling of charge-mass transport in solid electrolyte-based electrochemical nanomanufacturing process

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Simulation of electronic/ionic mixed conduction in solid ionic memory devices

Cited by 4 publications

References 11 publications

Coupled Ionic and Electronic Transport Model of Thin‐Film Semiconductor Memristive Behavior

Coupled Ionic and Electronic Transport Model of Thin‐Film Semiconductor Memristive Behavior

Continuous Electrical Tuning of the Chemical Composition of TaOx-Based Memristors

Modeling of charge-mass transport in solid electrolyte-based electrochemical nanomanufacturing process

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Continuous Electrical Tuning of the Chemical Composition of TaO_x-Based Memristors