Simulation of far-infrared HgTe/HgCdTe quantum-well vertical-cavity surface-emitting laser

Abstract

. We propose an original design for a far-infrared vertical-cavity surface-emitting laser based on a heterostructure with ten 4.7-nm HgTe / Hg0.3Cd0.7Te quantum wells grown on a [013] GaAs substrate. Its characteristics were calculated, and it was shown that the quality factor of the proposed resonator design can reach 248 at a wavelength of 23.25 μm, which is sufficient for the occurrence of laser generation at this wavelength at a temperature of 20 K and a concentration of nonequilibrium carriers of 1.4 × 1010 cm − 2. The estimate of the threshold pump intensity using CO2 laser radiation at a wavelength of 10.6 μm is 1 W / cm2, which makes it possible to expect continuous wave mode lasing. Such a low-threshold pump intensity should also lead to lasing at substantially higher temperatures.

ГЛАВА 4. ИССЛЕДОВАНИЕ МЕХАНИЗМОВ МЕЖЗОННОЙ РЕЛАКСАЦИИ НЕРАВНОВЕСНЫХ НОСИТЕЛЕЙ ЗАРЯДА В ГЕТЕРОСТРУКТУРАХ С КВАНТОВЫМИ ЯМАМИ HgCdTe/CdHgTe ДЛЯ ЛАЗЕРОВ СРЕДНЕГО И ДАЛЬНЕГО ИК ДИАПАЗОНОВ

“…Справа: локализация волноводной моды в предлагаемой резонаторной структуре; показаны распределение электрического поля (красный), показатель преломления Re() 1/2 (синий) и величина поглощения Im() 1/2 (черный). Рисунки из работы[14].…”