Simulation of Graphene-based Materials and Devices for Sub-Terahertz Applications

Mura, Monica La; Lamberti, Patrizia; Tucci, Vincenzo

doi:10.1109/nmdc57951.2023.10343897

Cited by 3 publications

(3 citation statements)

References 17 publications

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“…This value is reportedly affected also by the device contact resistance [7]. As already assessed for f T and f MAX [18], the value of f C is also strictly related to the operating point, due to the influence of the bias condition on the transconductance and on the input power. It can be noticed, by observing Figure 7b, that the crossing frequency of P 21 increases by increasing the drain bias voltage, V D .…”

Section: Power Conversion Performance Analysismentioning

confidence: 73%

“…To address this challenge, this work proposes an original analysis of the performance of a GFET-based frequency doubler model, providing choice criteria for making informed decisions during the design of operating conditions of GFETbased signal modulators. Building on our previous activity [3,12,18] and exploiting a GFET Verilog-A model of proven reliability, the proposed work explores the application of a recently presented high-performing GFET [19] to the frequency doubling operation by carrying out circuit simulations. The analysis is approached by comprehensively computing relevant figures of merit under varying conditions, such as different bias points and operating frequencies.…”

Section: Introductionmentioning

confidence: 99%

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Analysis of a Graphene FET-Based Frequency Doubler for Combined Sensing and Modulation through Compact Model Simulation

La Mura,

Lamberti,

Tucci

2024

Electronics

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The ambipolar conduction property of graphene field-effect transistors (GFETs) and the inherent square-like dependence of the drain current on the gate voltage, enable the development of single-device architectures for analog nonlinear radiofrequency (RF) circuits. The use of GFETs in novel RF component topologies allows leveraging graphene’s attractive thermal and mechanical properties to improve the miniaturization and weight reduction of electronic components. These features are specifically appealing for integrated sensing, modulation, and transmission systems. However, given the innovative nature of emerging graphene-based technology, a complete performance analysis of any novel electronic component is essential for customizing the operating conditions accordingly. This paper presents a comprehensive circuital analysis of a GFET-based frequency doubler, exploiting a compact model for GFET circuit simulation to assess the device’s performance parameters, including power conversion gain bandwidth and saturation. The performed analysis proposes to support the design of GFET-based harmonic transponders, offering integrated sensing and signal manipulation capabilities.

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Section: Power Conversion Performance Analysismentioning

confidence: 73%

Section: Introductionmentioning

confidence: 99%

Analysis of a Graphene FET-Based Frequency Doubler for Combined Sensing and Modulation through Compact Model Simulation

La Mura,

Lamberti,

Tucci

2024

Electronics

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“…Numerical analyses represent a cost-effective and timeefficient tool for the design and optimization of metamaterials for THz applications, in place of expensive and timeconsuming experimental prototyping [34]. Numerical analyses can be performed both at the material-level, to design the unit cell tailoring its THz response, and at the devicelevel, to analyse its performance during operation.…”

Section: Models For Numerical Analysis Of Ageing and Wear Effect On T...mentioning

confidence: 99%

Simulation of ageing and wear effect on graphene THz passive components using finite element method

La Mura,

Lamberti,

Kuzhir

2024

J. Phys. D: Appl. Phys.

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In the growing scenario of 2D material-based metamaterials and metasurfaces for Terahertz (THz) applications, assessing the impact of ageing and wear due to environmental stressors on the components’ performance is becoming mandatory to understand the long-term reliability of novel technologies. This paper introduces approaches to assess the ageing and wear effects on THz passive components through numerical simulations. For this purpose, common techniques for introducing 2D materials and thin metal layers in numerical models are discussed. As a case study, this work explores the effects of graphene degradation and reflective metal ageing on the electromagnetic (EM) response of a graphene-enhanced reflective grating for THz absorption and modulation by finite element (FE) analysis. The developed FE model is validated against experimental data obtained through THz Time-Domain Spectroscopy (TTDS). By computing the device's transmission, reflection, and absorption spectra for degrading graphene and metal conductive properties, this work provides insights into the influence of ageing and wear on THz passive components.

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Graphene Devices for Aerial Wireless Communications at THz

Mura,

Cassioli,

Shundalau

et al. 2024

J. Phys.: Conf. Ser.

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This paper investigates the state-of-the-art of graphene-based technologies for the prospective use cases of end-to-end terahertz (THz) communication systems, such as industrial Internet of Things (IoT) applications and unmanned aerial vehicles (UAVs). THz communications offer ultra-high throughput and enhanced sensing capabilities, enabling advanced applications like UAV swarms and integrated sensing, localization, and mapping. The potential of wireless THz communication can be unlocked by graphene technology. Graphene, owing to its remarkable electrical, thermal, and mechanical properties, emerges as a promising candidate for a multitude of applications in aerial wireless communications in the THz band, including high-speed electronic devices, tunable metamaterials, and innovative antennas. However, reliable tools for the simulation-based design of graphene components, able to account for the fabrication-related uncertainties, are still missing. This paper presents the envisaged possibilities of wireless communications in THz bands, overviews graphene devices for RF applications at THz, and discusses the open issues of modelling THz devices and THz channel.

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Simulation of Graphene-based Materials and Devices for Sub-Terahertz Applications

Cited by 3 publications

References 17 publications

Analysis of a Graphene FET-Based Frequency Doubler for Combined Sensing and Modulation through Compact Model Simulation

Analysis of a Graphene FET-Based Frequency Doubler for Combined Sensing and Modulation through Compact Model Simulation

Simulation of ageing and wear effect on graphene THz passive components using finite element method

Graphene Devices for Aerial Wireless Communications at THz

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