“…However, several mechanisms for engineering the band gap of graphene have been reported, which can be classified into three aspects. First, with quantum size effects, it is possible to modulate the bandgap gap by tweaking the width and specific edge of the strained graphene (e.g., zigzag-type or armchair-type graphene nanoribbons). , Second, it is also possible for the symmetry breaking of the graphene lattice to open the band gap (such as through the interaction between the graphene and silicon carbide substrate or by the application of an external electronic field on bilayer graphene). , Third, boron (B) or nitrogen (N) doping could be used for the graphene layer, which is also capable of opening the band gap of graphene. − However, with the difficulty of specifically controlling the edge of graphene, the complexity of electrically gated bilayer graphene, and the specific substrate of graphene placement, the doping technique is considered to possibly be the simplest, most versatile, and cost-effective method for the modulation of the band gap at the K (K′) point in the graphene electronic structure for a flexible pressure sensor application. In addition, to the best of our knowledge, the use of the piezoresistive effect of graphene through the doping process for a flexible pressure sensor application has not yet been reported.…”