Simulation of heat loss in Cu2ZnSn4S Se4− thin film solar cells: A coupled optical-electrical-thermal modeling

Zandi, Soma; Seresht, Mohsen Jamshidi; Khan, Afrasyab; Gorji, Nima E.

doi:10.1016/j.renene.2021.09.035

Cited by 31 publications

(11 citation statements)

References 26 publications

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“…Interestingly, the benchmarked solar cell shows the highest PCE of ∼30.57% at an N A of ∼10 16 cm –3, and decreases sharply with an increase in acceptor density, reaching ∼1.30% at an N A of ∼10 21 cm –3 . It is reasonable to infer that maximum electron and hole separation happens at N A ∼ 10 16 cm –3 because, at this point hole, the Fermi energy level approaches the highest valence band, thus increasing the open circuit voltage and short circuit current density as well, , while the probability of the recombination process increases with the increase in acceptor density and thus impedes the PV efficiency of the solar cell device. In addition, the PCE increases from 26.41 to 30.57% as E t increases from 0.1 to 1.60 eV and thereafter remains unchanged.…”

Section: Resultsmentioning

confidence: 99%

Device Simulation of a Thin-Layer CsSnI₃-Based Solar Cell with Enhanced 31.09% Efficiency

et al. 2023

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In the last decade, perovskite-based solar cells (PSCs) have become the hotspot in photovoltaic (PV) research around the globe because of their excellent photovoltaic performance in terms of their high-power conversion efficiency. However, the stability and existence of lead in the perovskite absorber layer hindered their use in practical applications. In the present study, we evaluated the numerical simulation-based performance of oxide/perovskite/oxide-type PSCs using the one-dimensional solar cell capacitance program (SCAPS-1D). Initially, the effect of various oxide-based electron transport layers (ETLs; TiO2, SnO2, and ZnO) and hole transport layers (HTLs; NiO, Cu2O, and CuO) on PSC performance was evaluated. It was found that a solar cell with TiO2 as an ETL and NiO as an HTL (FTO/n-TiO2/CsSnI3/p-NiO) exhibited the highest PV performance in terms of power conversion efficiency (PCE ∼ 30.57%), and other parameters were open circuit voltage (V OC ∼ 0.98 V), short circuit current density (J SC ∼ 35.17 mA/cm2) and fill factor (FF ∼ 88.43%). Next, we evaluated the effect of the thickness of TiO2, NiO, and CsSnI3 layers of the above-benchmarked device, along with their bulk and interface defects in detail. It is successfully demonstrated that the PCE and FF can further reach values of 31.09 and 88.39%, respectively, at a 1.25 μm thick CsSnI3 absorber with a band gap of E g ∼ 1.35 eV. The obtained results and detailed analysis will provide an important basis for the selection of CsSnI3 as an absorber with optimized defects.

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Section: Resultsmentioning

confidence: 99%

Device Simulation of a Thin-Layer CsSnI₃-Based Solar Cell with Enhanced 31.09% Efficiency

et al. 2023

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“…is electron (hole) mobility, and D n(p) is the diffusion coefficient of electrons (holes), which is related to q, μ, Boltzmann constant (k) and temperature (T) via D = μkT/q equation. Moreover, the appropriate non-radiative recombination mechanisms are SRH (generation-recombination» trap-assisted recombination) and Auger recombination models, which are defined as [33]:…”

Section: Modelling and Numerical Simulationmentioning

confidence: 99%

A 3D simulation model to study all-inorganic CsPbX₃ (X = Br and I) perovskites-based light-emitting diodes with different hole-transporting layers

Mozaffari,

Ghorashi

2024

Phys. Scr.

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The development of numerical models is essential for optimizing perovskite light-emitting diodes (PeLEDs) and explaining their physical mechanism for further efficiency improvement. This study reports, for the first time, on a detailed device modelling of an all-inorganic perovskite LED consisting of CsPbX3 (X=Br and I) as light emitting layer (LEL) with different hole transporting layers (HTLs), employing COMSOL Multiphysics simulation package. Therefore, a 3D simulation model is served to investigate the appropriate HTLs that meet the design requirements of a PeLED in terms of band off-set engineering. For this purpose, a series of all-inorganic halide perovskites with different HTLs are simulated under the same theoretical settings, and the performances of LEDs are compared with each other. This is done through studying their electronic properties using current density-voltage (J-V) characteristic curves and internal quantum efficiency (IQE) measurements. The results obtained from the J-V characteristics curve reveal that all the CsPbBr3-based samples with different HTLs exhibit the same turn-on voltage (Von) of approximately 4.2 V, while this value increases to 5.8 V for the CsPbI3-based samples. Compared with the PeLEDs based on CsPbI3, the PeLEDs based on CsPbBr3 indicate lower Von due to the formation of shorter charge carrier injection barriers at their interfaces. Furthermore, among the various simulated structures, the highest IQE is obtained for perovskite CsPbI3-based LED with MoO3 HTL (5.21%). The effect of different parameters on the performance of the proposed configurations are also investigated, and it turns out that the thickness of LELs and lifetime of charge carriers have a decisive role to play in the efficiency of PeLEDs. This theoretical study not only successfully explains the working principle of PeLEDs but also clearly shows researchers how to produce high-performance LEDs in the laboratory by knowing the physical properties of materials and accurately adjusting energy band alignments.

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“…Joule heating is an internal heat source when an electrical current passes through a resistive medium [118]. Peltier heat refers to the dissipation of heat at the interface between metal and semiconductor is an additional factor that contributes to the formation of internal heat and impacts the performance of the cells [119,120]. Because the internal heat suffers from a wide range of intrinsic defects reproduced, including atomic vacancy, interstitials, and lattice distortion replacements, including wider dimensionality imperfections present in perovskite films are also a significant element influencing the durability and efficiency of PSCs [121].…”

Section: Internal Heatmentioning

confidence: 99%

Advancements in the stability, protection and lead-free strategies of perovskite solar cells: a critical review

Khan,

Mustajab,

Moeen

et al. 2024

Environ. Sci.: Adv.

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Simulation of heat loss in Cu2ZnSn4S Se4− thin film solar cells: A coupled optical-electrical-thermal modeling

Cited by 31 publications

References 26 publications

Device Simulation of a Thin-Layer CsSnI₃-Based Solar Cell with Enhanced 31.09% Efficiency

Device Simulation of a Thin-Layer CsSnI₃-Based Solar Cell with Enhanced 31.09% Efficiency

A 3D simulation model to study all-inorganic CsPbX₃ (X = Br and I) perovskites-based light-emitting diodes with different hole-transporting layers

Advancements in the stability, protection and lead-free strategies of perovskite solar cells: a critical review

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Simulation of heat loss in Cu2ZnSn4S Se4− thin film solar cells: A coupled optical-electrical-thermal modeling

Cited by 31 publications

References 26 publications

Device Simulation of a Thin-Layer CsSnI3-Based Solar Cell with Enhanced 31.09% Efficiency

Device Simulation of a Thin-Layer CsSnI3-Based Solar Cell with Enhanced 31.09% Efficiency

A 3D simulation model to study all-inorganic CsPbX3 (X = Br and I) perovskites-based light-emitting diodes with different hole-transporting layers

Advancements in the stability, protection and lead-free strategies of perovskite solar cells: a critical review

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Product

Resources

About

Device Simulation of a Thin-Layer CsSnI₃-Based Solar Cell with Enhanced 31.09% Efficiency

Device Simulation of a Thin-Layer CsSnI₃-Based Solar Cell with Enhanced 31.09% Efficiency

A 3D simulation model to study all-inorganic CsPbX₃ (X = Br and I) perovskites-based light-emitting diodes with different hole-transporting layers