Simulation of High Breakdown Voltage, Improved Current Collapse Suppression, and Enhanced Frequency Response AlGaN/GaN HEMT Using A Double Floating Field Plate

Abstract

In this paper, DC, transient, and RF performances among AlGaN/GaN HEMTs with a no field plate structure (basic), a conventional gate field plate structure (GFP), and a double floating field plate structure (2FFP) were studied by utilizing SILVACO ATLAS 2D device technology computer-aided design (TCAD). The peak electric fields under the gate in drain-side can be alleviated effectively in 2FFP devices, compared with basic and GFP devices, which promotes the breakdown voltage (BV) and suppresses the current collapse phenomenon. As a result, the ON-resistance increase caused by the current collapse phenomena is dramatically suppressed in 2FFP ~19.9% compared with GFP ~49.8% when a 1 ms duration pre-stress was applied with Vds = 300 V in the OFF-state. Because of the discontinuous FP structure, more electric field peaks appear at the edge of the FFP stacks, which leads to a higher BV of ~454.4 V compared to the GFP ~394.3 V and the basic devices ~57.6 V. Moreover, the 2FFP structure performs lower a parasitic capacitance of Cgs = 1.03 pF and Cgd = 0.13 pF than those of the GFP structure (i.e., Cgs = 1.89 pF and Cgd = 0.18 pF). Lower parasitic capacitances lead to a much higher cut-off frequency (ft) of 46 GHz and a maximum oscillation frequency (fmax) of 130 GHz than those of the GFP structure (i.e., ft = 27 GHz and fmax = 93 GHz). These results illustrate the superiority of the 2FFP structure for RF GaN HEMT and open up enormous opportunities for integrated RF GaN devices.

Simulation Research on High-Voltage β-Ga2O3 MOSFET Based on Floating Field Plate

“…The reason is as follows: the introduction of the F-FP will cause slight changes in the gate-to-source capacitance and drain-to-gate capacitance of the device, and it only has a minor impact on the DC characteristics of the device. [32][33][34] Due to the positive bias of the F-FP (i.e., no channel depletion). 35,36 On the other hand the simulation is performed under ideal conditions.…”

Thermal Performance of Cu Electroplated GaN/AlGaN High-Electron-Mobility Transistors with Various-Thickness Si Substrates

“…GaN-based HEMTs also show potential for high-power sub-millimeter wave RF and microwave applications in satellite communications including 5G/6G technologies [7]. AlGaN/GaN heterostructure-based high-electron-mobility transistors (HEMTs) have been widely studied for high-power and high-frequency applications due to their high electron density, high thermal stability, high drift velocity and large electric breakdown field [8][9][10][11][12][13][14]. Furthermore, other high-power systems, such as high-concentration III-V multijunction solar cells, also require efficient heat dissipation solutions [15][16][17].…”