Simulation of hysteresis loops for polycrystalline ferroelectrics by an extensive Landau-type model

Wang, Yinglong; Wang, Xingyuan; Chu, Lizhi; Deng, Zechao; Liang, Wenjing; Liu, Baoting; Fu, Guangsheng; Wongdamnern, N.; Sareein, Thanapong; Yimnirun, Rattikorn

doi:10.1016/j.physleta.2009.09.050

Cited by 11 publications

(12 citation statements)

References 38 publications

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“…If the value of E 0 is not enough to saturate the ferroelectric material sufficiently, the value of α up (E) cannot reach 0 or 1 for the applied electric field. Replacement of α up (E) by ( ) up E α ′ forces the polarization curve to the saturation and improves agreement with experimental results in saturation region [9].…”

Section: B Y L Wang Et Al Model [9]supporting

confidence: 73%

“…The free energy (F) whose minimum determines the equilibrium state of the system can be expanded as a power series of order parameter in the vicinity of the transition [3]. The free energy for a polycrystalline ferroelectric can be expressed as [9],…”

Section: B Y L Wang Et Al Model [9]mentioning

confidence: 99%

“…P up is upward polarization and it is related to downward polarization (P down ) as P up = -P down [9]. Here it considers α down =1-α up , where α up and α down are the volume fractions of upward polarization and downward polarization in the whole volume, respectively [9]. P up can be determined by taking derivative of above equation and equating to zero.…”

Section: B Y L Wang Et Al Model [9]mentioning

confidence: 99%

“…Values of the parameters used for the simulation are listed on the Table 2. The value of α is calculated using the formula α = -(T-T c )/(ε 0 xC) where, T c is ferroelectric Curie-Weiss temperature, ε 0 is dielectric permittivity of free space and C is Curie-Weiss constant [9]. The curve for P up in Fig.…”

Section: B Y L Wang Et Al Model [9]mentioning

confidence: 99%

“…This model is used in the current finite element device simulator Atlas from Silvaco International [8]. Y. L. Wang et al used Landau free energy theory for modeling hysteresis of polycrystalline ferroelectrics [9]. A curve fitting algorithm for modeling hysteresis is given by C. Fu et al that divides one branch of the hysteresis into three different domain curves with nine unknown constants and extracts the polarization values from the measured hysteresis curve to produce an analytic representation [10].…”

Section: Introductionmentioning

confidence: 99%

See 4 more Smart Citations

A practical model to analytically characterize the polarization hysteresis of ferroelectric capacitors

Shrestha

Pieper

Wondmagegn

et al. 2012

Proceedings of the 2012 44th Southeastern Symposium on System Theory (SSST)

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A simulation based comparative study of the polarization hysteresis of the ferroelectric capacitor using various ferroelectric models is presented. A 2-dimensional finite element device-level model was implemented using SILVACO's ATLAS device simulator to generate the polarization hysteresis characteristics for Au/Poly(vinylidene fluoride-trifluoroethylene)/Au metal-insulator-metal (MIM) device. Landau free energy expression for electric field in terms of polarization is also implemented in the MATLAB to produce the polarization hysteresis curve of polycrystalline ferroelectrics. The main drawback of these models was their inability to predict polarization saturation at the same electric field limits for which the experimental device was saturating. A new model for ferroelectric hysteresis based on curve fitting algorithm is derived that forces the polarization to be saturated at desired electric field. The MATLAB simulation of this model and the experimental hysteresis is compared which shows an excellent level of agreement.

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Section: B Y L Wang Et Al Model [9]supporting

confidence: 73%

Section: B Y L Wang Et Al Model [9]mentioning

confidence: 99%

Section: B Y L Wang Et Al Model [9]mentioning

confidence: 99%

Section: B Y L Wang Et Al Model [9]mentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 3 more Smart Citations

A practical model to analytically characterize the polarization hysteresis of ferroelectric capacitors

Shrestha

Pieper

Wondmagegn

et al. 2012

Proceedings of the 2012 44th Southeastern Symposium on System Theory (SSST)

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Couplings of Polarization with Interfacial Deep Trap and Schottky Interface Controlled Ferroelectric Memristive Switching

Chen

Zhang

Dedon

et al. 2020

Adv Funct Materials

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Memristors with excellent scalability have the potential to revolutionize not only the field of information storage but also neuromorphic computing. Conventional metal oxides are widely used as resistive switching materials in memristors. Interface-type memristors based on ferroelectric materials are emerging as alternatives in the development of high-performance memory devices. A clear understanding of the switching mechanisms in this type of memristors, however, is still in its early stages. By comparing the bipolar switching in different systems, it is found that the switchable diode effect in ferroelectric memristors is controlled by polarization modulated Schottky barrier height and polarization coupled interfacial deep states trapping/ detrapping. Using semiconductor theories with consideration of polarization effects, a phenomenological theory is developed to explain the currentvoltage behavior at the metal/ferroelectric interface. These findings reveal the critical role of the interaction among polarization charges, interfacial defects, and Schottky interface in controlling ferroelectric resistive switching and offer the guidance to design ferroelectric memristors with enhanced performance.

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Simulation of the initial polarization curves and hysteresis loops for ferroelectric films by an extensive time-dependent Ginzburg–Landau model

Wang

Chu

et al. 2010

J Mater Sci

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Simulation of hysteresis loops for polycrystalline ferroelectrics by an extensive Landau-type model

Cited by 11 publications

References 38 publications

A practical model to analytically characterize the polarization hysteresis of ferroelectric capacitors

A practical model to analytically characterize the polarization hysteresis of ferroelectric capacitors

Couplings of Polarization with Interfacial Deep Trap and Schottky Interface Controlled Ferroelectric Memristive Switching

Simulation of the initial polarization curves and hysteresis loops for ferroelectric films by an extensive time-dependent Ginzburg–Landau model

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