Infrared Technology and Applications XLIII 2017
DOI: 10.1117/12.2262473
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Simulation of infrared avalanche photodiodes from first principles

Abstract: The present article deals with device physics and modeling of an Hg 0.28 Cd 0.72 Te wide-area electron-initiated avalanche photodiode, with main input data extracted from first principles electronic structure codes. Due to the large dimensions of 30 µm x 30 µm x 11 µm a method which combines Monte Carlo transport simulation in the active multiplication layer with 'weak conduction' modeling in the charge carrier exit paths is introduced. Consequences resulting from adding perturbative, non-self-consistent small… Show more

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