Simulation of InGaAs-Based Planar Nanodevices As Terahertz Rectifiers

Abstract

A planar nanodevice, known as the self-switching diode (SSD), has a non-linear current-voltage characteristic that resembles a typical diode behaviour. Unlike other conventional diodes that depending on barrier junction or gate, SSD utilized its L-shaped trenches to exhibit non-linear I-V behaviour, which can be exploited for high-frequency operations. This paper presents technology computer-aided design (TCAD) rectification studies of two InGaAs-based SSDs connected in parallel with similar/different length operating at sub-terahertz frequencies and at zero bias. As expected, the combination of SSDs with the shortest length possess the highest cut-off frequency, and in this case, at approximately 0.35 THz. This is comparable with the recent proposed hybrid structure of SSD and planar barrier diode (SSD/PBD). In fact, it has lower leakage current than SSD/PBD which can reflect to a better rectification performance.