Simulation of InGaAs/InGaP multiple quantum well systems for multijunction solar cell

Winter, Edward; Micha, Daniel Neves; Klein, N.; Pires, M. P.; Souza, P. L.

doi:10.1109/sbmicro.2017.8112996

Cited by 8 publications

(4 citation statements)

References 10 publications

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“…Winter et al have theoretically shown that the bandgap of an InxGa1-xAs/InyGa1-xP QW can be tuned between 0.7 and 1.3 eV by varying x, y, LQW and LB and, therefore be useful as one of the junctions in many different MJSC scenarios (see Fig. 3) [15,37]. For a more thorough review of this topic refer to [16].…”

Section: Types Of Solar Cells Based On Iii-v Materialsmentioning

confidence: 99%

Iii-v Solar Cells

Kawabata

Costa

Pinto

et al. 2022

JICS

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In this review article solar cells based on III-V materials are addressed, starting by a brief description of their operation principle, including key materials’ issues. Subsequently, the different types of III-V solar cells are presented, together with their state-of-the-art performance. Various approaches to reduce their costs are then discussed, and an outlook of the research in this field concludes the paper.

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Section: Types Of Solar Cells Based On Iii-v Materialsmentioning

confidence: 99%

Iii-v Solar Cells

Kawabata

Costa

Pinto

et al. 2022

JICS

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“…Figura 12: Diagrama de bandas de energia, níveis de energia (5 para cada banda) e funções de onda para algumas escolhas particulares de E w , E b , xe y, ou seja: (a) 1 nm, 10 nm, 0.698, e 0.416; (b) 10 nm, 20 nm, 0.140, e 0.416 (Winter, 2017).…”

Section: Junção 2 (J2): Poços Quânticos De Ingaas/ingapunclassified

Micro usina fotovoltaica comercial Miramontes: Expansão alterações e análise do desempenho

Buiatti¹,

Carvalho²,

Mariano³

et al. 2020

Energia No Brasil – Volume 1

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“…However, by using Ge as the bottom junction and substrate, it is not possible to find a lattice matched III-V semiconductor material to be used in the intermediate junction. In order to overcome this difficulty, the use of multiple quantum well structures, which can provide an effective bandgap of 1.18 eV, has already been reported using InGaAs/InGaP [4] and InGaAs/GaAsP [5]. For spatial applications, the former proposal would be more suitable, given its improved hardness for high energy exposure [6].…”

Section: Introductionmentioning

confidence: 99%

Optimization of the InGaP Top Junction of Triple Junction Solar Cell for Spatial Application

Cunha

Micha

Kawabata

et al. 2019

JICS

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Electrical current mismatching is a well-known limitation of triple junction solar cells that lowers the final conversion efficiency. Several solutions have been proposed to face this issue, including the insertion of a multiple quantum well structure as the intermediate junction’s active material. With a better matching in the current among the junctions, the total current increases, thus modifying the working conditions of the overall device. In this way, the InGaP top junction needs to be optimized to such new condition. In this work, numerical simulations were carried out aiming the enlargement of the electrical current density of an InGaP pn junction to achieve the proper current matching in triple junction solar cell for spatial applications. The optimized structure has been grown in a GaAs substrate and characterized as a single junction solar cell. Although the measured short circuit current density and conversion efficiency are still well below the theoretically predicted values, processing improvement should lead to adequate cell performance.

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Simulation of InGaAs/InGaP multiple quantum well systems for multijunction solar cell

Cited by 8 publications

References 10 publications

Iii-v Solar Cells

Iii-v Solar Cells

Micro usina fotovoltaica comercial Miramontes: Expansão alterações e análise do desempenho

Optimization of the InGaP Top Junction of Triple Junction Solar Cell for Spatial Application

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