Simulation of InGaN quantum well LEDs with reduced internal polarization

Andreev, Zhelio; Römer, Friedhard; Witzigmann, Bernd

doi:10.1002/pssa.201100377

Cited by 5 publications

(2 citation statements)

References 16 publications

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“…The effect of the oxygen impurities has been analyzed in more detail by carrier transport simulations of the SQW structure. The simulation framework has been applied for LED as well as solar cell simulations () and employs a drift/diffusion approach for multiple carrier populations which are separated in the energy space . Electrons and holes are divided into a continuum population and a quantized populations per QW.…”

Section: Oxygen Impurity Effectmentioning

confidence: 99%

Effect of oxygen impurities in semipolar III‐nitride light emitting diodes

Römer

Witzigmann

2016

Physica Status Solidi (a)

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We investigate the effect of oxygen impurities on the internal quantum efficiency of semipolar III‐nitride light emitting diodes (LED) structures grown along the false(202‾1false) direction by means of carrier transport simulations. For the model calculations, realistic doping and impurity profiles obtained by secondary ion mass spectroscopy are used. We discuss the impact of the oxygen impurity density on the operation of the LED and the interaction of the donor‐type oxygen impurities with the acceptor doping. It is shown that up to a certain oxygen concentration, no major degradation of the LED efficiency occurs and that with increasing oxygen impurity density the LED efficiency becomes more sensitive to variations of the acceptor doping profile. The independent variation of the oxygen concentration revealed that oxygen impurities are most critical in the electron blocking layer and the p‐side barrier.

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Section: Oxygen Impurity Effectmentioning

confidence: 99%

Effect of oxygen impurities in semipolar III‐nitride light emitting diodes

Römer

Witzigmann

2016

Physica Status Solidi (a)

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“…Energy efficient light emitting diodes (LEDs) are amongst such devices. [11][12][13] However, from an atomistic standpoint, to model the single-particle states of QDs, multi-QW (MQWs) or even full LED structures, the (time-independent) Schrödinger equation (SE) has to be solved for systems that can easily contain up to several million atoms. 10,14 Given the large number of atoms, standard density functional theory cannot be applied and empirical models have been widely used.…”

Section: Introductionmentioning

confidence: 99%

Electronic structure of semiconductor nanostructures: A modified localization landscape theory

et al. 2020

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In this paper we present a modified localization landscape theory to calculate localized/confined electron and hole states and the corresponding energy eigenvalues without solving a (large) eigenvalue problem. We motivate and demonstrate the benefit of solvingĤ 2 u = 1 in the modified localization landscape theory in comparison toĤu = 1, solved in the localization landscape theory. We detail the advantages by fully analytic considerations before targeting the numerical calculation of electron and hole states and energies in III-N heterostructures. We further discuss how the solution ofĤ 2 u = 1 is used to extract an effective potential W that is comparable to the effective potential obtained fromĤu = 1, ensuring that it can for instance be used to introduce quantum corrections to drift-diffusion transport calculations. Overall, we show that the proposed modified localization landscape theory keeps all the benefits of the recently introduced localization landscape theory but further improves factors such as convergence of the calculated energies and the robustness of the method against the chosen integration region for u to obtain the corresponding energies. We find that this becomes especially important for here studied c-plane InGaN/GaN quantum wells with higher In contents. All these features make the proposed approach very attractive for calculation of localized states in highly disordered systems, where partitioning the systems into different subregions can be difficult.

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Modelling surface effects in nano wire optoelectronic devices

Römer

Witzigmann

2012

J Comput Electron

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Simulation of InGaN quantum well LEDs with reduced internal polarization

Cited by 5 publications

References 16 publications

Effect of oxygen impurities in semipolar III‐nitride light emitting diodes

Effect of oxygen impurities in semipolar III‐nitride light emitting diodes

Electronic structure of semiconductor nanostructures: A modified localization landscape theory

Modelling surface effects in nano wire optoelectronic devices

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