Simulation of ion beam assisted deposition—a comparison with experimental results

Ektessabi, A. M.; Sato, Shinsuke; Kitamura, Hiroaki; Masaki, Yuichi

doi:10.1016/0042-207x(93)90156-5

Cited by 17 publications

(1 citation statement)

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“…The independent operation of an ion source and a vapor source make the IBAD technique highly controllable, reproducible and flexible. It is possible to grow films with the required properties such as preferable orientations and high densities by selecting the parameters of IBAD appropriately [7][8][9][10][11][12].…”

Section: Introductionmentioning

confidence: 99%

Ion Beam Processing and Analysis of MgO Thin Films

Nomura

Ide‐Ektessabi²,

Yasui³

et al. 2003

AIP Conference Proceedings

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Reflection high-energy electron diffraction experimental analysis of polycrystalline MgO films with grain size and orientation distributions J. Appl. Phys. 93, 205 (2003); 10.1063/1.1526156 Formation and destruction of cube texture in MgO films using ion beam assisted pulsed laser deposition Effects of post-treatment of MgO on the discharge characteristics of an alternating current plasma display panel J.Abstract. Thin film of MgO is widely used as a protecting layer of plasma display panel (PDP). We prepared the MgO thin films using ion beam assisted deposition (IBAD) technique with the aim of controlling the crystal orientation of the films. Oxygen ion beam was utilized to irradiate the growing films. The ion beam irradiation was performed by electron cyclotron resonance (ECR) type ion source. The flux of evaporated MgO was produced using an electron gun. Energy and current density of the ion beam as well as deposition rate were taken as the parameters to control the deposition. Composition and crystallinity of the films were measured using Rutherford backscattering spectroscopy (RBS) and X-ray diffraction (XRD). In this study, we discuss the effects of simultaneous irradiation of the films by oxygen ion beam during film growth. Experimental results suggest that the ion beam irradiation during film growth strongly influences the crystal properties of the films to have the best orientation for high efficiency secondary electron emission. † Corresponding author: Ari Ide-Ektessabi.

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