Simulation of Ion Beam Irradiation Effects in Perovskite Oxide Memristors

Abstract

Radiation effects of ion beams in perovskite oxide memristors are analyzedand linked to absorbed dose values, calculated from simulations of ion transport. Several ion species were used in simulations, chosen to represent certain commonly encountered radiation environments. Results indicate that considerable formation of oxygen ion - oxygen vacancy pairs, as well as advent of displaced rare earth and alkaline atoms, is to be expected. Oxygen vacancies can lead to a decrease or increase of active layer resistance, depending on applied voltage polarity. The loss of vacancies from the device is bound to impair the performance of the memristor. Calculated absorbed dose values in the memristor for various incident ion beams are typically on the order of several kGy.