Simulation of ISFET operation based on the site-binding model

Meixner, Leonhard; Koch, Sabine

doi:10.1016/0925-4005(92)80077-b

Cited by 26 publications

(16 citation statements)

References 5 publications

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“…6,7 One could of course argue that the correlation between the response and AES oxygen intensity is a coincidence and that the differences are due to different values of or . 5͒, clearly indicates that the gas response is proportional to the concentration of surface oxygen atoms at the insulator surface.…”

Section: Discussionmentioning

confidence: 99%

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The influence of the insulator surface properties on the hydrogen response of field-effect gas sensors

Eriksson

Salomonsson

Lundström

et al. 2005

Journal of Applied Physics

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Articles you may be interested inA Pt-Ti-O gate Si-metal-insulator-semiconductor field-effect transistor hydrogen gas sensor Effects of interface states and temperature on the C -V behavior of metal/insulator/AlGaN/GaN heterostructure capacitors Sulfur surface chemistry on the platinum gate of a silicon carbide based hydrogen sensorThe influence of mass transport processes on the response to gas mixtures of field-effect devices with large-area catalytic metal gatesThe hydrogen response of gas-sensitive field-effect devices is mainly due to trapping of atomic hydrogen on the insulator side of the metal-insulator interface of the metal-insulator-semiconductor ͑MIS͒ structure. Therefore an influence of the choice of insulator on the hydrogen response properties is expected. We have investigated this influence by producing MIS capacitors with four different insulators; SiO 2 , Al 2 O 3 , Si 3 N 4 , and Ta 2 O 5 . The results show that the choice of insulator influences the detection limit, the saturation concentration, and the saturation response. Furthermore, there is a strong correlation between the observed saturation response and the oxygen concentration of the insulator surface, as measured by Auger electron spectroscopy, which indicates that the trapping of hydrogen at the interface occurs at the oxygen atoms of the insulator surface. Finally, if the metal film is porous a catalytic oxidation of the insulator surface appears to be facilitated, which can increase the hydrogen response.

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Section: Discussionmentioning

confidence: 99%

“…6,7 The oxygen concentration at the insulator surface is not the only important property of the insulator. The results support a response mechanism where the hydrogen trapping sites are located at the oxygen atoms of the insulator surface.…”

Section: Discussionmentioning

confidence: 99%

The influence of the insulator surface properties on the hydrogen response of field-effect gas sensors

Eriksson

Salomonsson

Lundström

et al. 2005

Journal of Applied Physics

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“…[25,26,27] For such sensing experiments, the oxide surface needs to be modified to specifically detect the targeted species. Besides ionselective membranes [28,9], self-assembled monolayers (SAMs) of functional molecules have been used for this purpose.…”

Section: Introductionmentioning

confidence: 99%

Competing surface reactions limiting the performance of ion-sensitive field-effect transistors

Stoop

Wipf

Müller

et al. 2015

Sensors and Actuators B: Chemical

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Ion-sensitive field-effect transistors based on silicon nanowires are promising candidates for the detection of chemical and biochemical species. These devices have been established as pH sensors thanks to the large number of surface hydroxyl groups at the gate dielectrics which makes them intrinsically sensitive to protons. To specifically detect species other than protons, the sensor surface needs to be modified. However, the remaining hydroxyl groups after functionalization may still limit the sensor response to the targeted species.Here, we describe the influence of competing reactions on the measured response using monolayer of calcium-sensitive molecules. We identify the residual pH response as the key parameter limiting the sensor response. The competing effect of pH or any other relevant reaction at the sensor surface has therefore to be included to quantitatively understand the sensor response and prevent misleading interpretations.

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“…The understanding of the behavior of silicon nitride Si 3 N 4 [6] has a practical importance because until recently, it has been one of most commonly used insulator for pH sensing in ISFET. A two-site theory [7 -9] has been developed to explain the mechanism involved in pH sensitivity of the Si 3 N 4 surface.…”

Section: Introductionmentioning

confidence: 99%

Modelling of the Potentiometric Response of ENFETs Based on Enzymatic Multilayer Membranes

et al. 2004

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Based on the modified site-binding model, the response of urea-sensitive enzymatic field effect transistors (ENFETs) is fitted. The effect of two types of surface sites (silanol and amine sites) and of additional polymeric permselective membrane on the sensitivity of the biosensor is discussed. It is found that the dependence of the slope of the sensor response versus pUrea, on the buffer concentration and on the diffusion of the urea in the enzymatic membrane can be translated by a parameter a that depends on the membrane composition. Moreover, the enhancement of the sensor sensitivity by deposition of additional permselective membranes can be illustrated by a parameter d that depends on the association of additional permselective membranes and a buffer; the higher values of parameter d are obtained with a Nafion membrane associated with a phosphate buffer.

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Simulation of ISFET operation based on the site-binding model

Cited by 26 publications

References 5 publications

The influence of the insulator surface properties on the hydrogen response of field-effect gas sensors

The influence of the insulator surface properties on the hydrogen response of field-effect gas sensors

Competing surface reactions limiting the performance of ion-sensitive field-effect transistors

Modelling of the Potentiometric Response of ENFETs Based on Enzymatic Multilayer Membranes

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