Simulation of low frequency noise in buried-channel MOSFET by a Green’s function-based numerical trap level model

Shi, S.; Yuan, Jie

doi:10.1016/j.sse.2022.108272

Solid-State Electronics

2022

DOI: 10.1016/j.sse.2022.108272

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Simulation of low frequency noise in buried-channel MOSFET by a Green’s function-based numerical trap level model

S. Shi

Jie Yuan

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Simulation of low frequency noise in buried-channel MOSFET by a Green’s function-based numerical trap level model

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References 16 publications

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